K9XXG08UXM vs K9PDG08U5M 对比

详细并排对比 K9XXG08UXM 出自 Samsung Electronics 和 K9PDG08U5M 出自 Samsung Electronics。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Samsung Electronics
K9XXG08UXM K9XXG08UXM - 2G x 8 Bit NAND Flash Memory | Samsung

K9XXG08UXM - 2G x 8 Bit NAND Flash Memory | Samsung

K9XXG08UXM Obsolete
Samsung Electronics
K9PDG08U5M K9PDG08U5M - 4Gb x8 SLC NAND Flash 3.3V | Samsung Electronics

K9PDG08U5M - 4Gb x8 SLC NAND Flash 3.3V | Samsung Electronics

K9PDG08U5M ✗ 停产

规格对比

参数 K9XXG08UXM K9PDG08U5M
品牌 Samsung Electronics Samsung Electronics
分类 Memory ICs EEPROM
生命周期状态 Obsolete 停产
库存状态 有库存 有库存
单价(USD) $0.00 $4.20
存储容量 2G x 8 Bit (2Gb) —
Memory Cell Array Organization (1G + 32M) bit x 8 bit —
Data Register (2K + 64) bit x 8 bit —
电源电压 2.7 V to 3.6 V [DATA_NEEDED: supply voltage range]
Page Size (2K + 64) Byte [DATA_NEEDED: page size]
Block Size (256K + 8K) Byte [DATA_NEEDED: block size]
Program Operation Automatic Page Program, (2K + 64) Byte —
Erase Operation Automatic Block Erase, (256K + 8K) Byte —
I/O Interface 8-bit multiplexed address/data/command —
Control Signals CLE, ALE, CE, RE, WE, WP, R/B —
Cell Type SLC (single-level cell) NAND —
封装 48-pin TSOP TSOP1-48
安装类型 Surface Mount Surface Mount
工作温度 [DATA_NEEDED: Operating Temperature] [DATA_NEEDED: operating temperature range]
Access Time (tR) [DATA_NEEDED: Access Time] —
RoHS 状态 [DATA_NEEDED: RoHS Status] [DATA_NEEDED: RoHS status]
存储器类型 — NAND Flash (SLC)
Density — 4 Gbit
存储组织 — x8 (multiplexed I/O)
Page Read Time — [DATA_NEEDED: page read time]
Page Program Time — [DATA_NEEDED: page program time]
Block Erase Time — [DATA_NEEDED: block erase time]
Access Interface — Asynchronous multiplexed address/data, CLE/ALE control
Ready/Busy Output — Yes (R/B, open-drain)
Write Protect Pin — Yes (/WP)
Endurance — [DATA_NEEDED: program/erase cycles]

数据手册与资源

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