K9XXG08UXM vs K9PDG08U5M Comparación
Comparación detallada lado a lado de K9XXG08UXM por Samsung Electronics y K9PDG08U5M por Samsung Electronics. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Samsung Electronics
K9PDG08U5M - 4Gb x8 SLC NAND Flash 3.3V | Samsung Electronics
K9PDG08U5M ✗ Fin de vidaComparación de especificaciones
| Parámetro | K9XXG08UXM | K9PDG08U5M |
|---|---|---|
| Marca | Samsung Electronics | Samsung Electronics |
| Categoría | Memory ICs | EEPROM |
| Estado del ciclo de vida | Obsolete | Fin de vida |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,00 | $4,20 |
| Tamaño de memoria | 2G x 8 Bit (2Gb) | — |
| Memory Cell Array Organization | (1G + 32M) bit x 8 bit | — |
| Data Register | (2K + 64) bit x 8 bit | — |
| Tensión de alimentación | 2.7 V to 3.6 V | [DATA_NEEDED: supply voltage range] |
| Page Size | (2K + 64) Byte | [DATA_NEEDED: page size] |
| Block Size | (256K + 8K) Byte | [DATA_NEEDED: block size] |
| Program Operation | Automatic Page Program, (2K + 64) Byte | — |
| Erase Operation | Automatic Block Erase, (256K + 8K) Byte | — |
| I/O Interface | 8-bit multiplexed address/data/command | — |
| Control Signals | CLE, ALE, CE, RE, WE, WP, R/B | — |
| Cell Type | SLC (single-level cell) NAND | — |
| Encapsulado | 48-pin TSOP | TSOP1-48 |
| Tipo de montaje | Surface Mount | Surface Mount |
| Temperatura de funcionamiento | [DATA_NEEDED: Operating Temperature] | [DATA_NEEDED: operating temperature range] |
| Access Time (tR) | [DATA_NEEDED: Access Time] | — |
| Estado RoHS | [DATA_NEEDED: RoHS Status] | [DATA_NEEDED: RoHS status] |
| Tipo de memoria | — | NAND Flash (SLC) |
| Density | — | 4 Gbit |
| Organización de memoria | — | x8 (multiplexed I/O) |
| Page Read Time | — | [DATA_NEEDED: page read time] |
| Page Program Time | — | [DATA_NEEDED: page program time] |
| Block Erase Time | — | [DATA_NEEDED: block erase time] |
| Access Interface | — | Asynchronous multiplexed address/data, CLE/ALE control |
| Ready/Busy Output | — | Yes (R/B, open-drain) |
| Write Protect Pin | — | Yes (/WP) |
| Endurance | — | [DATA_NEEDED: program/erase cycles] |