M25P80-VMN3PB vs M25P16-VMN3PB 对比

详细并排对比 M25P80-VMN3PB 出自 Micron Technology 和 M25P16-VMN3PB 出自 Micron Technology。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Micron Technology
M25P80-VMN3PB M25P80-VMN3PB - 8Mbit SPI NOR Flash 75MHz SOIC-8 | Micron

M25P80-VMN3PB - 8Mbit SPI NOR Flash 75MHz SOIC-8 | Micron

M25P80-VMN3PB ✗ 停产
Micron Technology
M25P16-VMN3PB M25P16-VMN3PB - 16Mb SPI NOR Flash 75MHz SOIC-8 | Micron

M25P16-VMN3PB - 16Mb SPI NOR Flash 75MHz SOIC-8 | Micron

M25P16-VMN3PB ✗ 停产

规格对比

参数 M25P80-VMN3PB M25P16-VMN3PB
品牌 Micron Technology Micron Technology
分类 EEPROM Memory ICs
生命周期状态 停产 停产
库存状态 有库存 有库存
单价(USD) $0.75 $0.98
存储器类型 FLASH - NOR Memory IC Serial NOR Flash, SLC
存储容量 8 Mbit (1M x 8) —
接口 SPI SPI
最大时钟频率 75 MHz 75 MHz
电源电压 2.7 V to 3.6 V 2.7 V to 3.6 V
Page Program Time 0.64 ms typ (up to 256 bytes) —
存储组织 1M x 8 bit 2 M x 8 (2,000,000 bytes x 8)
安装类型 Surface Mount Surface Mount
封装 8-SO (SOIC-8) 8-SO (SOIC, 208 mil SOP)
Erase Capability Sector erase and bulk erase —
Write Protect Hardware write protect (W pin) —
Hold Function Yes (HOLD pin) —
Access Time 8 ns 15 ns
工作温度 [DATA_NEEDED: operating temperature range] -40C to +125C
Program/Erase Endurance [DATA_NEEDED: program/erase endurance cycles] —
RoHS 状态 [DATA_NEEDED: RoHS status] [DATA_NEEDED: RoHS status]
Memory Density — 16 Mbit (16,777,216 bits)
Write/Erase Endurance — 100,000 cycles
Temperature Grade — Automotive
Number of Terminals — 8
Maximum Seated Height — 1.75 mm
Product Longevity Program — Yes
Write Protection — Hardware (WP#) and software block protection

数据手册与资源

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