M25PE10-VMN3TPB vs M25PE40-VMN3TPB 对比
详细并排对比 M25PE10-VMN3TPB 出自 Micron Technology 和 M25PE40-VMN3TPB 出自 Micron Technology。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
Micron Technology
M25PE10-VMN3TPB - 1Mb SPI NOR Flash 75MHz AEC-Q100 | Micron
M25PE10-VMN3TPB ObsoleteMicron Technology
M25PE40-VMN3TPB - 4Mb SPI NOR Flash 75MHz 8-SO | Micron Technology
M25PE40-VMN3TPB Obsolete规格对比
| 参数 | M25PE10-VMN3TPB | M25PE40-VMN3TPB |
|---|---|---|
| 品牌 | Micron Technology | Micron Technology |
| 分类 | Memory ICs | Memory ICs |
| 生命周期状态 | Obsolete | Obsolete |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.75 | $0.52 |
| 存储器类型 | FLASH - NOR (serial paged) | Non-Volatile Flash - NOR |
| 存储容量 | 1 Mbit (128K x 8) | 4Mb (512K x 8) |
| 接口 | SPI | SPI |
| Clock Frequency | 75 MHz | 75 MHz |
| 电源电压 | 3V/3.3V | 2.7 V to 3.6 V |
| Write Cycle Time - Page | 3 ms | — |
| Write Cycle Time - Word | 15 ms | — |
| 封装 | 8-SOIC (SO-8) | 8-SOIC (0.154in, 3.90mm width) |
| 安装类型 | Surface Mount | Surface Mount |
| Packaging | Tape & Reel (TR) | — |
| Qualification | Automotive AEC-Q100 | — |
| Part Status | Obsolete | Obsolete |
| Programming Granularity | 1 to 256 bytes per Page Write / Page Program | — |
| 分类 | Memory chips - Flash | — |
| 工作温度 | [DATA_NEEDED: operating temperature range] | — |
| Access Time | [DATA_NEEDED: access time] | — |
| Memory Format | — | FLASH |
| Write Cycle Time - Word, Page | — | 15 ms, 3 ms |
| Page Program Time | — | 0.8 ms (typ) |
| Page Write Time | — | 11 ms (typ) |
| Page Erase Time | — | 10 ms (typ) |
| Subsector Erase | — | 4 KB |
| Sector Erase | — | 64 KB |
| Bulk Erase | — | 4 Mb |
| Deep Power-Down Current | — | 1 uA (typ) |
| Electronic Signature | — | JEDEC 2-byte signature 8013h |
| Endurance | — | More than 100,000 program/erase cycles |
| Write Protection | — | Software (64KB sector basis) and hardware BP0/BP1/BP2 |