M29F160FB55N3F2 vs M29F160FB55N3E2 对比

详细并排对比 M29F160FB55N3F2 出自 Micron Technology 和 M29F160FB55N3E2 出自 Micron Technology。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Micron Technology
M29F160FB55N3F2 M29F160FB55N3F2 - 16Mbit 5V NOR Flash 55ns | Micron

M29F160FB55N3F2 - 16Mbit 5V NOR Flash 55ns | Micron

M29F160FB55N3F2 Obsolete
Micron Technology
M29F160FB55N3E2 M29F160FB55N3E2 - 16Mbit 55ns 5V NOR Flash | Micron

M29F160FB55N3E2 - 16Mbit 55ns 5V NOR Flash | Micron

M29F160FB55N3E2 ✓ 量产中

规格对比

参数 M29F160FB55N3F2 M29F160FB55N3E2
品牌 Micron Technology Micron Technology
分类 Memory ICs Memory ICs
生命周期状态 Obsolete 有效
库存状态 有库存 有库存
单价(USD) $5.60 $2.72
存储器类型 Parallel NOR Flash NOR Flash - Parallel, Asynchronous
Density 16777 kbits (16 Mbit) 16777 kbits (16 Mbit)
存储组织 1 Mword x 16 bits / 2 Mbyte x 8 bits 1 M x 16 / 2 M x 8
Number of Words 1000 k 1000 k
Bits per Word 16 bits 16 bits
Access Time 55 ns 55 ns
电源电压 5 V —
Boot Block Architecture Bottom Boot Block —
工作温度 -40 to +125 C -40 C to +125 C
接口 Parallel Parallel
Package Type 48-TSOP —
安装类型 Surface Mount Surface Mount
Termination Finish Lead-free (F2 suffix) —
Program/Erase Controller Embedded byte/word program algorithms —
Block Protection Hardware boot block protection —
RoHS 状态 Compliant (lead-free) ROHS3 Compliant
Speed Grade (from MPN) 55 (55 ns) —
Supply Voltage (VCC) — 5 V
Boot Block — Bottom Boot Block (FB)
Programming Algorithm — Embedded byte/word program and erase controller
封装 — 48-TSOP I
Packaging — Tray
Lead Free Status — Lead Free

数据手册与资源

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