M29F200FB55M3E2 vs M29F200FB55N3E2 对比
详细并排对比 M29F200FB55M3E2 出自 Micron Technology 和 M29F200FB55N3E2 出自 Micron Technology。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | M29F200FB55M3E2 | M29F200FB55N3E2 |
|---|---|---|
| 品牌 | Micron Technology | Micron Technology |
| 分类 | Memory ICs | Memory ICs |
| 生命周期状态 | 停产 | 停产 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.00 | $4.45 |
| 存储器类型 | Flash - NOR Memory IC | NOR Flash, Parallel |
| Density | 2097 kbits (2 Mbit) | 2 Mbit (2097 kbits) |
| 存储组织 | 128K x 16 bits | 256K x 8 / 128K x 16 |
| Number of Words | 128 k | 128 K |
| Bits per Word | 16 bits | 16 bits |
| 接口 | Parallel | Parallel, 8/16-bit selectable |
| Access Time | 55 ns | 55 ns |
| Supply Voltage (VCC) | 5 V | 5 V |
| Boot Block Architecture | Bottom Boot Block | Bottom Boot Block |
| Program / Erase Controller | Embedded byte/word program algorithms | — |
| 工作温度 | -40C to +125C | -40C to +125C |
| Package Type | 44-SO (SOP44) | 48-pin TSOP I |
| 安装类型 | Surface Mount | Surface Mount |
| 品牌 | Micron Technology Inc. | — |
| Programming Voltage | [DATA_NEEDED: program/erase supply voltage] | — |
| Sector Organization | [DATA_NEEDED: sector/erase block organization] | — |
| RoHS 状态 | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS status] |
| Endurance | [DATA_NEEDED: program/erase cycles] | — |
| Program/Erase Controller | — | Embedded byte/word program algorithms |
| Memory Cell Type | — | SLC NOR |
| Packaging | — | Tray |