M29F200FT55M3F2 vs M29F160FT55N3F2 对比

详细并排对比 M29F200FT55M3F2 出自 Micron Technology 和 M29F160FT55N3F2 出自 Micron Technology。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Micron Technology
M29F200FT55M3F2 M29F200FT55M3F2 - 2Mbit 55ns 5V NOR Flash | Micron | Automotive

M29F200FT55M3F2 - 2Mbit 55ns 5V NOR Flash | Micron | Automotive

M29F200FT55M3F2 ✓ 量产中
Micron Technology
M29F160FT55N3F2 M29F160FT55N3F2 - 16Mbit 5V 55ns NOR Flash | Micron Technology

M29F160FT55N3F2 - 16Mbit 5V 55ns NOR Flash | Micron Technology

M29F160FT55N3F2 ✓ 量产中

规格对比

参数 M29F200FT55M3F2 M29F160FT55N3F2
品牌 Micron Technology Micron Technology
分类 Memory ICs Flash
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $1.85 $4.90
存储器类型 Parallel NOR Flash NOR Flash (Parallel, Asynchronous)
Density 2 Mbit (2097 kbits) 16 Mbit (16777 kbits)
存储组织 256K x 8 / 128K x 16 1M x 16 / 2M x 8
Access Time 55 ns 55 ns
Supply Voltage (VCC) 5 V 5 V (operating 4.5 V)
Boot Block Architecture Top Boot Block —
Programming Interface Embedded program/erase controller, byte or word —
工作温度 -40C to +125C -40C to +125C
Automotive Qualification Yes —
封装 44-pin SO (TSOP) 48-Pin TSOP
安装类型 Surface Mount Surface Mount
Packaging Tape & Reel (T/R) Tape & Reel
Number of Words (x16 mode) 128 K —
Bits per Word (x16 mode) 16 bits —
RoHS 状态 [DATA_NEEDED: RoHS status] [DATA_NEEDED: RoHS status]
Program/Erase Endurance [DATA_NEEDED: program/erase cycles] —
Number of Words — 1000 k
Bits per Word — 16 bits
接口 — Parallel
Synchronous / Asynchronous — Asynchronous
Boot Block Location — Top boot block (FT)
Program / Erase — Embedded byte/word program algorithms (controller on-chip)
MSL 等级 — [DATA_NEEDED: moisture sensitivity level]

数据手册与资源

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