M29F800FB55M3F2 vs M29F800FT55M3E2 对比

详细并排对比 M29F800FB55M3F2 出自 Micron Technology 和 M29F800FT55M3E2 出自 Micron Technology。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Micron Technology
M29F800FB55M3F2 M29F800FB55M3F2 - 8Mbit 5V 55ns NOR Flash SO44 | Micron

M29F800FB55M3F2 - 8Mbit 5V 55ns NOR Flash SO44 | Micron

M29F800FB55M3F2 ✓ 量产中
Micron Technology
M29F800FT55M3E2 M29F800FT55M3E2 - 8Mbit 55ns 5V Parallel NOR Flash | Micron

M29F800FT55M3E2 - 8Mbit 55ns 5V Parallel NOR Flash | Micron

M29F800FT55M3E2 ✓ 量产中

规格对比

参数 M29F800FB55M3F2 M29F800FT55M3E2
品牌 Micron Technology Micron Technology
分类 Memory ICs EEPROM
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $3.72 $3.95
存储器类型 NOR Flash, Parallel NOR Flash
Density 8389 kbits (8 Mbit) 8389 kbits
存储组织 512K x 16-bit / 1M x 8-bit 512K x 16 bit
Number of Words 512 k —
Bits per Word 16 bits —
Access Time 55 ns 55 ns
Supply Voltage (VCC) 5 V —
Boot Block Type Bottom Boot Block —
接口 Parallel, Asynchronous Parallel
Programming Embedded byte/word program algorithms —
OTP Area 64 byte —
工作温度 -40C to +125C -40C to +125C
Automotive Qualification Auto Grade 3 (temperature grade 3, +125C) —
封装 44-pin SO (SOIC-44) 44-SO (SOP)
安装类型 Surface Mount Surface Mount
Packing Tape & Reel (T/R) —
RoHS 状态 [DATA_NEEDED: RoHS status] Compliant (E suffix)
Endurance [DATA_NEEDED: program/erase endurance cycles] —
存储容量 — 8 Mbit
电源电压 — 5 V
Boot Block Location — Top boot block
Program/Erase Cycles — 100,000 per block
Program Algorithm — Embedded byte/word program
Erase Features — Erase suspend and resume
Standby Mode — Automatic standby, low power
Identification — Electronic signature

数据手册与资源

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