M29W128GH70ZA3E vs M29W128GH70N3E 对比

详细并排对比 M29W128GH70ZA3E 出自 Micron Technology 和 M29W128GH70N3E 出自 Micron Technology。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Micron Technology
M29W128GH70ZA3E M29W128GH70ZA3E - 128Mbit Parallel NOR Flash, 70ns | Micron

M29W128GH70ZA3E - 128Mbit Parallel NOR Flash, 70ns | Micron

M29W128GH70ZA3E ✓ 量产中
Micron Technology
M29W128GH70N3E M29W128GH70N3E - 128Mb Parallel NOR Flash, 70ns | Micron

M29W128GH70N3E - 128Mb Parallel NOR Flash, 70ns | Micron

M29W128GH70N3E ✓ 量产中

规格对比

参数 M29W128GH70ZA3E M29W128GH70N3E
品牌 Micron Technology Micron Technology
分类 Memory ICs Memory ICs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $2.70 $0.00
存储器类型 NOR Flash NOR Flash
存储容量 128 Mbit 128 Mbit (16 MB)
存储组织 8M x 16 8M x 16 / 16M x 8
接口 Parallel Parallel (asynchronous)
Access Time 70 ns 70 ns
Technology SLC NOR —
安装类型 Surface Mount Surface Mount
封装 64-TBGA (10x13 mm) 56-TSOP
电源电压 [DATA_NEEDED: supply voltage range] 2.7 V to 3.6 V
工作温度 [DATA_NEEDED: operating temperature range] -40C to +125C
Boot Block Architecture Bottom boot (GH suffix) —
Program/Erase Voltage [DATA_NEEDED: program/erase voltage] —
Endurance [DATA_NEEDED: program/erase cycles] —
CFI Compliant [DATA_NEEDED: CFI compliance] —
RoHS 状态 [DATA_NEEDED: RoHS status] [DATA_NEEDED: RoHS status]
Moisture Sensitivity Level [DATA_NEEDED: MSL level] —
Temperature Grade — Automotive
Number of Terminals — 56
数据总线宽度 — 16 bit (byte/word selectable)
Memory Density — 131072 kbit
Programming — Command-sequence program/erase with status polling
Application Segment — Automotive / Industrial code storage
Program/Erase Cycles — [DATA_NEEDED: endurance]

数据手册与资源

浏览全部产品 创建 BOM 获取报价