M29W160ET70N3E vs M29F160FB55N3F2 对比
详细并排对比 M29W160ET70N3E 出自 Micron Technology 和 M29F160FB55N3F2 出自 Micron Technology。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
Micron Technology
M29W160ET70N3E - 16Mb 3V Parallel NOR Flash 70ns TSOP48 | Micron
M29W160ET70N3E ✓ 量产中规格对比
| 参数 | M29W160ET70N3E | M29F160FB55N3F2 |
|---|---|---|
| 品牌 | Micron Technology | Micron Technology |
| 分类 | Memory ICs | Memory ICs |
| 生命周期状态 | 有效 | Obsolete |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $4.50 | $5.60 |
| 存储器类型 | NOR Flash (Parallel) | Parallel NOR Flash |
| 存储容量 | 16 Mbit | — |
| 存储组织 | 2M x 8 / 1M x 16 | 1 Mword x 16 bits / 2 Mbyte x 8 bits |
| Access Time | 70 ns | 55 ns |
| 接口 | Parallel | Parallel |
| 电源电压 | 3 V / 3.3 V (nominal) | 5 V |
| Boot Block Location | Top boot | — |
| 封装 | 48-TSOP | — |
| 安装类型 | Surface Mount | Surface Mount |
| Automotive Qualification | AEC-Q100 qualified | — |
| 工作温度 | [DATA_NEEDED: operating temperature range] | -40 to +125 C |
| Bus Width Selection | BYTE# pin, x8 or x16 | — |
| Sector Protection | Hardware boot block protection | — |
| Programming Type | Automatic program and erase | — |
| Packing | Tray (RoHS-compliant package, standard packing) | — |
| RoHS 状态 | Compliant (E suffix) | Compliant (lead-free) |
| Endurance | [DATA_NEEDED: program/erase cycles] | — |
| Data Retention | [DATA_NEEDED: data retention] | — |
| Density | — | 16777 kbits (16 Mbit) |
| Number of Words | — | 1000 k |
| Bits per Word | — | 16 bits |
| Boot Block Architecture | — | Bottom Boot Block |
| Package Type | — | 48-TSOP |
| Termination Finish | — | Lead-free (F2 suffix) |
| Program/Erase Controller | — | Embedded byte/word program algorithms |
| Block Protection | — | Hardware boot block protection |
| Speed Grade (from MPN) | — | 55 (55 ns) |