M29W160ET70N3E vs M29W160EB70N3E 对比
详细并排对比 M29W160ET70N3E 出自 Micron Technology 和 M29W160EB70N3E 出自 Micron Technology。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
Micron Technology
M29W160ET70N3E - 16Mb 3V Parallel NOR Flash 70ns TSOP48 | Micron
M29W160ET70N3E ✓ 量产中
规格对比
| 参数 | M29W160ET70N3E | M29W160EB70N3E |
|---|---|---|
| 品牌 | Micron Technology | Micron Technology |
| 分类 | Memory ICs | Memory ICs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $4.50 | $1.76 |
| 存储器类型 | NOR Flash (Parallel) | FLASH - NOR |
| 存储容量 | 16 Mbit | 16 Mbit (2M x8, 1M x16) |
| 存储组织 | 2M x 8 / 1M x 16 | 2M x8 / 1M x16 |
| Access Time | 70 ns | 70 ns |
| 接口 | Parallel | Parallel |
| 电源电压 | 3 V / 3.3 V (nominal) | — |
| Boot Block Location | Top boot | — |
| 封装 | 48-TSOP | — |
| 安装类型 | Surface Mount | Surface Mount |
| Automotive Qualification | AEC-Q100 qualified | — |
| 工作温度 | [DATA_NEEDED: operating temperature range] | -40C to +125C |
| Bus Width Selection | BYTE# pin, x8 or x16 | — |
| Sector Protection | Hardware boot block protection | — |
| Programming Type | Automatic program and erase | — |
| Packing | Tray (RoHS-compliant package, standard packing) | — |
| RoHS 状态 | Compliant (E suffix) | [DATA_NEEDED: RoHS status] |
| Endurance | [DATA_NEEDED: program/erase cycles] | — |
| Data Retention | [DATA_NEEDED: data retention] | — |
| Supply Voltage (VCC) | — | 2.7 V to 3.6 V |
| Programming Time | — | 10 us (typical) |
| Cell Type | — | SLC NOR |
| 封装 / 外壳 | — | 48-TFSOP (0.724 in, 18.40 mm width) |
| Packaging | — | Tray |
| Speed Grade | — | -70 |
| FBGA Code | — | N/A (TSOP package) |
| MSL 等级 | — | [DATA_NEEDED: moisture sensitivity level] |