M29W320DT70N3F vs M29W800FT70N3E 对比
详细并排对比 M29W320DT70N3F 出自 Micron Technology 和 M29W800FT70N3E 出自 Micron Technology。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | M29W320DT70N3F | M29W800FT70N3E |
|---|---|---|
| 品牌 | Micron Technology | Micron Technology |
| 分类 | Memory ICs | Flash |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $2.95 | $2.05 |
| 存储器类型 | FLASH - NOR | NOR Flash (Parallel) |
| 存储容量 | 32 Mbit (4M x 8, 2M x 16) | — |
| Access Speed | 70 ns | — |
| 接口 | Parallel (Byte-wide) | Parallel, address/data bus |
| Supply Voltage - VCC | 2.7 V to 3.6 V | — |
| VPP Fast Program Voltage | 12 V (optional) | — |
| Boot Block Organization | Top boot block (DT suffix) | — |
| Block Architecture | Non-uniform parameter blocks | — |
| 封装 / 外壳 | 48-TFSOP (0.724 in, 18.40 mm width) | — |
| 安装类型 | Surface Mount | Surface Mount |
| Packaging | Tape & Reel (TR suffix) | — |
| Temperature Grade | Automotive | — |
| Max Seated Height | 1.2 mm | — |
| Number of Terminals | 48 | — |
| 工作温度范围 | [DATA_NEEDED: operating temperature range] | — |
| Write Cycle - Page Program Time | [DATA_NEEDED: page program time] | — |
| Density | — | 8 Mbit |
| 存储组织 | — | 1M x 8 / 512K x 16 |
| Access Time | — | 70 ns |
| Supply Voltage (VCC) | — | 2.7 V to 3.6 V |
| Programming / Erase Supply | — | Single supply at VCC (2.7 V to 3.6 V) |
| Boot Block Location | — | Top boot block (FT variant) |
| Bus Width | — | 8-bit or 16-bit (BYTE pin selectable) |
| 工作温度 | — | -40C to +125C |
| 封装 | — | 48-TSOP I (12 x 20 mm, 0.5 mm pitch) |
| Standby Current | — | [DATA_NEEDED: standby current] |
| Program/Erase Endurance | — | [DATA_NEEDED: program/erase cycles] |
| Data Retention | — | [DATA_NEEDED: data retention] |
| Block Organization | — | [DATA_NEEDED: block size/organization] |
| RoHS 状态 | — | [DATA_NEEDED: RoHS status] |