M29W400FB55N3F vs M29W400FT55N3E 对比

详细并排对比 M29W400FB55N3F 出自 Micron Technology 和 M29W400FT55N3E 出自 Micron Technology。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Micron Technology
M29W400FB55N3F M29W400FB55N3F - 4Mbit 55ns Parallel NOR Flash | Micron

M29W400FB55N3F - 4Mbit 55ns Parallel NOR Flash | Micron

M29W400FB55N3F ✓ 量产中
Micron Technology
M29W400FT55N3E M29W400FT55N3E - 4Mbit NOR Flash 55ns 48-TSOP | Micron

M29W400FT55N3E - 4Mbit NOR Flash 55ns 48-TSOP | Micron

M29W400FT55N3E ✓ 量产中

规格对比

参数 M29W400FB55N3F M29W400FT55N3E
品牌 Micron Technology Micron Technology
分类 Memory ICs Memory ICs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $2.55 $2.80
存储器类型 NOR Flash Flash - NOR Memory IC
存储容量 4 Mbit 4 Mbit
存储组织 512K x8 / 256K x16 —
接口 Parallel (asynchronous) Parallel
Access Time 55 ns 55 ns
Supply Voltage (VCC) 2.7 V to 3.6 V 2.7 V to 3.6 V (program, erase and read)
Program/Erase Supply Single 2.7 V to 3.6 V —
Byte/Word Select BYTE# pin —
Block Architecture Boot block with hardware sector protection —
Program Suspend/Erase Suspend Supported —
封装 48-pin TSOP I (12 x 20 mm) 48-TSOP I
安装类型 Surface Mount Surface Mount
Packaging Tape & Reel (TR) Tray
Lead-Free / RoHS Yes (F suffix = lead-free RoHS-compliant) —
工作温度 [DATA_NEEDED: operating temperature range] -40C to +125C
Endurance [DATA_NEEDED: program/erase cycles per block] —
Data Retention [DATA_NEEDED: retention years] —
Sector Size — 16 KB, 8 KB, 32 KB, 64 KB (asymmetric boot-block)
Boot Block Position — Top (FT suffix)
Temperature Grade — Automotive
Number of Terminals — 48
Package Code / Shape — TSSOP / Rectangular
湿敏等级(MSL) — 3 (168 Hours)
Peak Reflow Time — 30 s max
Companion Access-Time Grade — 55 ns and 70 ns versions available in family

数据手册与资源

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