M29W400FB55N3F vs M29W400FT55N3E Vergleich
Detaillierter Direktvergleich von M29W400FB55N3F von Micron Technology und M29W400FT55N3E von Micron Technology. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | M29W400FB55N3F | M29W400FT55N3E |
|---|---|---|
| Marke | Micron Technology | Micron Technology |
| Kategorie | Memory ICs | Memory ICs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $2,55 | $2,80 |
| Speichertyp | NOR Flash | Flash - NOR Memory IC |
| Speichergröße | 4 Mbit | 4 Mbit |
| Speicherorganisation | 512K x8 / 256K x16 | — |
| Schnittstelle | Parallel (asynchronous) | Parallel |
| Access Time | 55 ns | 55 ns |
| Supply Voltage (VCC) | 2.7 V to 3.6 V | 2.7 V to 3.6 V (program, erase and read) |
| Program/Erase Supply | Single 2.7 V to 3.6 V | — |
| Byte/Word Select | BYTE# pin | — |
| Block Architecture | Boot block with hardware sector protection | — |
| Program Suspend/Erase Suspend | Supported | — |
| Gehäuse | 48-pin TSOP I (12 x 20 mm) | 48-TSOP I |
| Montageart | Surface Mount | Surface Mount |
| Packaging | Tape & Reel (TR) | Tray |
| Lead-Free / RoHS | Yes (F suffix = lead-free RoHS-compliant) | — |
| Betriebstemperatur | [DATA_NEEDED: operating temperature range] | -40C to +125C |
| Endurance | [DATA_NEEDED: program/erase cycles per block] | — |
| Data Retention | [DATA_NEEDED: retention years] | — |
| Sector Size | — | 16 KB, 8 KB, 32 KB, 64 KB (asymmetric boot-block) |
| Boot Block Position | — | Top (FT suffix) |
| Temperature Grade | — | Automotive |
| Number of Terminals | — | 48 |
| Package Code / Shape | — | TSSOP / Rectangular |
| Feuchtigkeitsempfindlichkeitsgrad (MSL) | — | 3 (168 Hours) |
| Peak Reflow Time | — | 30 s max |
| Companion Access-Time Grade | — | 55 ns and 70 ns versions available in family |