M29W400FB55N3F vs M29W800FB70ZA3SF 对比
详细并排对比 M29W400FB55N3F 出自 Micron Technology 和 M29W800FB70ZA3SF 出自 Micron Technology。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | M29W400FB55N3F | M29W800FB70ZA3SF |
|---|---|---|
| 品牌 | Micron Technology | Micron Technology |
| 分类 | Memory ICs | Memory ICs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $2.55 | $2.45 |
| 存储器类型 | NOR Flash | — |
| 存储容量 | 4 Mbit | — |
| 存储组织 | 512K x8 / 256K x16 | — |
| 接口 | Parallel (asynchronous) | — |
| Access Time | 55 ns | 70 ns |
| Supply Voltage (VCC) | 2.7 V to 3.6 V | 2.7 V to 3.6 V |
| Program/Erase Supply | Single 2.7 V to 3.6 V | — |
| Byte/Word Select | BYTE# pin | — |
| Block Architecture | Boot block with hardware sector protection | — |
| Program Suspend/Erase Suspend | Supported | — |
| 封装 | 48-pin TSOP I (12 x 20 mm) | 48-TFBGA (6x8) |
| 安装类型 | Surface Mount | Surface Mount |
| Packaging | Tape & Reel (TR) | — |
| Lead-Free / RoHS | Yes (F suffix = lead-free RoHS-compliant) | — |
| 工作温度 | [DATA_NEEDED: operating temperature range] | -40C to +125C |
| Endurance | [DATA_NEEDED: program/erase cycles per block] | [DATA_NEEDED: program/erase cycles] |
| Data Retention | [DATA_NEEDED: retention years] | [DATA_NEEDED: data retention] |
| Density | — | 8 Mb (1 MB) |
| Memory Organization | — | 1M x 8 / 512K x 16 |
| 接口类型 | — | Parallel |
| Boot Block Location | — | Bottom boot (FB) |
| Ball Pitch | — | [DATA_NEEDED: ball pitch] |
| Byte/Word Organization Pin | — | Yes (BYTE pin selects x8/x16) |
| Programming Time | — | [DATA_NEEDED: programming time] |
| XIP Support | — | Yes (parallel random-access, execute-in-place capable) |
| RoHS 状态 | — | [DATA_NEEDED: RoHS status] |
| Reel Option | — | Available (M29W800FB70ZA3SF TR) |