M29W800FB70N3E vs M29W800FB70ZA3SE 对比

详细并排对比 M29W800FB70N3E 出自 Micron Technology 和 M29W800FB70ZA3SE 出自 Micron Technology。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Micron Technology
M29W800FB70N3E M29W800FB70N3E - 8Mbit 3V Parallel NOR Flash 70ns | Micron

M29W800FB70N3E - 8Mbit 3V Parallel NOR Flash 70ns | Micron

M29W800FB70N3E ✓ 量产中
Micron Technology
M29W800FB70ZA3SE M29W800FB70ZA3SE - 8Mbit NOR Flash 70ns 48-TFBGA | Micron

M29W800FB70ZA3SE - 8Mbit NOR Flash 70ns 48-TFBGA | Micron

M29W800FB70ZA3SE Obsolete

规格对比

参数 M29W800FB70N3E M29W800FB70ZA3SE
品牌 Micron Technology Micron Technology
分类 Memory ICs Memory ICs
生命周期状态 有效 Obsolete
库存状态 有库存 有库存
单价(USD) $0.95 $1.12
存储器类型 NOR Flash NOR Flash, Parallel
Density 8 Mbit (8388608 bits) —
存储组织 512K x 16 / 1M x 8 1 M x 8 / 512 K x 16
数据总线宽度 x8/x16 (BYTE# selectable) —
Access Time 70 ns 70 ns
Supply Voltage (VCC) up to 3.6 V for program, erase and read —
Programming Time 10 us per byte/word (typical) —
Memory Blocks 19 blocks, 1 boot block (bottom - FB configuration) —
接口 Parallel Parallel, address/data bus
工作温度 -40C to +125C [DATA_NEEDED: operating temperature range]
封装 48-TSOP (12 x 20 mm), TSOP I 48-TFBGA (6 x 8 mm)
引脚数量 48 —
安装类型 Surface Mount Surface Mount
RoHS 状态 RoHS compliant (plastic TSOP-48) [DATA_NEEDED: RoHS status]
Product Longevity Program No —
FBGA Code N/A —
Chipset Validation N/A —
存储容量 — 8 Mbit
电源电压 — 3 V / 3.3 V (2.7 V to 3.6 V class)
Technology — SLC NOR
Boot Block Architecture — Bottom boot block (FB)
Qualification — AEC-Q100 automotive
Packaging — Tray
Program/Erase Endurance — [DATA_NEEDED: endurance cycles]
Active Read Current — [DATA_NEEDED: ICC read]
Standby Current — [DATA_NEEDED: ICC standby]
Moisture Sensitivity Level — [DATA_NEEDED: MSL]

数据手册与资源

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