M321R4GA0PB2-CCP vs M321R4GA3EB2-CWM 对比

详细并排对比 M321R4GA0PB2-CCP 出自 Samsung Electro-Mechanics 和 M321R4GA3EB2-CWM 出自 Samsung Electronics。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Samsung Electro-Mechanics
M321R4GA0PB2-CCP M321R4GA0PB2-CCP - 32GB DDR5-6400 ECC RDIMM | Samsung

M321R4GA0PB2-CCP - 32GB DDR5-6400 ECC RDIMM | Samsung

M321R4GA0PB2-CCP ✓ 量产中
Samsung Electronics
M321R4GA3EB2-CWM M321R4GA3EB2-CWM - 32GB DDR5-5600 ECC RDIMM | Samsung

M321R4GA3EB2-CWM - 32GB DDR5-5600 ECC RDIMM | Samsung

M321R4GA3EB2-CWM ✓ 量产中

规格对比

参数 M321R4GA0PB2-CCP M321R4GA3EB2-CWM
品牌 Samsung Electro-Mechanics Samsung Electronics
分类 Memory ICs EEPROM
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.00 $1,260.00
Capacity 32 GB (1 x 32 GB) —
存储器类型 DDR5 SDRAM DDR5 SDRAM ECC Registered (RDIMM)
Module Type 288-pin RDIMM (ECC Registered) —
Speed 6400 MT/s (PC5-51200) —
CAS 延迟 CL52 CL46
Operating Voltage 1.1 V 1.1 V
Configuration 1Rx4 (single rank, x4) —
存储组织 4G x 72 2Rx8 (dual rank, x8)
DRAM Devices 20 x 4G x 4 DDR5 DRAM, FBGA package —
ECC ECC Registered (on-die ECC + side-band) —
Form Factor 288-pin DIMM 288-pin RDIMM
Bandwidth 51.2 GB/s peak (PC5-51200) —
Rank Single Rank —
Compliance 100% JEDEC compliant —
Compatible Platforms Dell, HPE, Lenovo ThinkSystem, Supermicro (Xeon / EPYC DDR5 platforms) Dell PowerEdge, HPE ProLiant, Lenovo ThinkSystem, Supermicro DDR5 servers
工作温度 [DATA_NEEDED: operating temperature range] [DATA_NEEDED: operating temperature range]
GTIN / EAN 4262552150022 —
Memory Capacity — 32 GB
数据速率 — 5600 MT/s (PC5-44800)
DRAM Composition — 20 x 2Gx8 FBGA DRAM components
Ranks — 2
Error Correction — On-die ECC (ODECC) + registered parity/CRC
DRAM Die — E-die (12nm-class process)
JEDEC Compliance — JEDEC PC5-44800R compliant
Module Supply — 12 V input with on-module PMIC (1.1 V DRAM rail)
RoHS 状态 — Compliant
Peak Bandwidth — Approx. 44.8 GB/s per module

数据手册与资源

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