MMBT3904-7-F vs MMBT3904,215 对比

详细并排对比 MMBT3904-7-F 出自 Diodes Incorporated 和 MMBT3904,215 出自 Nexperia。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Diodes Incorporated
MMBT3904-7-F MMBT3904-7-F - 40V NPN Small Signal BJT 200mA SOT-23 | Diodes Inc

MMBT3904-7-F - 40V NPN Small Signal BJT 200mA SOT-23 | Diodes Inc

MMBT3904-7-F ✓ 量产中

规格对比

参数 MMBT3904-7-F MMBT3904,215
品牌 Diodes Incorporated Nexperia
分类 Transistors Transistors
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.04 $0.02
晶体管类型 NPN Bipolar Junction Transistor (BJT) NPN
集电极-发射极电压(Vceo) 40 V 40 V
集电极-基极电压(Vcbo) 40 V 60 V
发射极-基极电压(Vebo) 6 V 6 V
Continuous Collector Current (IC) 200 mA 200 mA
Power Dissipation (PD) 300 mW —
过渡频率(ft) 300 MHz minimum 300 MHz (minimum)
DC Current Gain (hFE) 100 to 300 @ IC=10 mA, VCE=1 V 100 to 300 (at IC = 10 mA, VCE = 1 V)
集电极-发射极饱和电压(Vce(sat)) 200 mV typical @ IC=10 mA 200 mV (typical at IC = 10 mA)
工作温度范围 -55 C to +150 C -65 °C to +150 °C
封装 / 外壳 SOT-23-3 —
安装类型 Surface Mount Surface Mount
Die Construction Epitaxial Planar —
Complementary PNP Type MMBT3906-7-F —
RoHS Compliance Yes (Lead-Free, Halogen-Free, Antimony-Free) —
封装 — SOT-23 (TO-236AB)
Power Dissipation (Pd) — 250 mW
Noise Figure (NF) — 5 dB (maximum)
引脚数量 — 3
PNP Complement — MMBT3906
RoHS 状态 — Compliant

数据手册与资源

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