MRF6P9220HR5 vs MRF6P9220HR3 对比

详细并排对比 MRF6P9220HR5 出自 NXP Semiconductors 和 MRF6P9220HR3 出自 NXP Semiconductors。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

NXP Semiconductors
MRF6P9220HR5 MRF6P9220HR5 - 880MHz 47W RF Power MOSFET | NXP Semiconductors

MRF6P9220HR5 - 880MHz 47W RF Power MOSFET | NXP Semiconductors

MRF6P9220HR5 ✓ 量产中
NXP Semiconductors
MRF6P9220HR3 MRF6P9220HR3 - 880MHz 47W RF Power MOSFET | NXP

MRF6P9220HR3 - 880MHz 47W RF Power MOSFET | NXP

MRF6P9220HR3 ✓ 量产中

规格对比

参数 MRF6P9220HR5 MRF6P9220HR3
品牌 NXP Semiconductors NXP Semiconductors
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $91.20 $58.40
晶体管类型 N-Channel RF Power MOSFET N-Channel Lateral MOSFET (RF Power)
Technology LDMOS (Laterally Diffused MOS) LDMOS, enhancement-mode
Drain-Source Voltage (Vdss) 68 V —
Continuous Drain Current (Id) 1.6 A —
Typical Operating Voltage 28 V —
Operating Frequency 880 MHz —
Output Power (Pout) 47 W (CW) —
Power Gain (Gps) 20 dB —
封装 / 外壳 NI-860C3 (5-pin ceramic, flange mount) —
安装类型 Through-Hole / Bolt-Down Surface/chassis mount (flange to heatsink)
Configuration Single, Flanged Common-source, single-ended
MSL 等级 [DATA_NEEDED: MSL level] —
工作温度 -40C to +150C (TJ) —
RoHS 状态 [DATA_NEEDED: RoHS status] [DATA_NEEDED: RoHS status]
Lead-Free [DATA_NEEDED: lead-free status] —
Polarization N-Channel —
Manufacturer — NXP Semiconductors (formerly Freescale)
Part Number — MRF6P9220HR3
Drain-Source Voltage (VDS) — 28 V typical
Test Frequency — 880 MHz
Typical Output Power (Pout) — 47 W (average, N-CDMA)
Power Gain (Gp) — 20 dB typical
Drain Current at Test (ID) — [DATA_NEEDED: drain current at Pout test]
Quiescent Bias Current (IDQ) — 1.6 A typical
Drain Efficiency — [DATA_NEEDED: efficiency at test]
Operating Frequency Range — Up to 1000 MHz (broadband, up to ~1 GHz typical)
封装 — NI-860C3 (ceramic, flange-mount)
Application — Base-station PA, N-CDMA, industrial RF
Operating Mode — Enhancement mode

数据手册与资源

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