MRF6P9220HR5 vs MRF6P9220HR3 Comparación

Comparación detallada lado a lado de MRF6P9220HR5 por NXP Semiconductors y MRF6P9220HR3 por NXP Semiconductors. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.

NXP Semiconductors
MRF6P9220HR5 MRF6P9220HR5 - 880MHz 47W RF Power MOSFET | NXP Semiconductors

MRF6P9220HR5 - 880MHz 47W RF Power MOSFET | NXP Semiconductors

MRF6P9220HR5 ✓ Activo
NXP Semiconductors
MRF6P9220HR3 MRF6P9220HR3 - 880MHz 47W RF Power MOSFET | NXP

MRF6P9220HR3 - 880MHz 47W RF Power MOSFET | NXP

MRF6P9220HR3 ✓ Activo

Comparación de especificaciones

Parámetro MRF6P9220HR5 MRF6P9220HR3
Marca NXP Semiconductors NXP Semiconductors
Categoría MOSFETs MOSFETs
Estado del ciclo de vida Activo Activo
Estado del stock In Stock In Stock
Precio unitario (USD) $91,20 $58,40
Tipo de transistor N-Channel RF Power MOSFET N-Channel Lateral MOSFET (RF Power)
Technology LDMOS (Laterally Diffused MOS) LDMOS, enhancement-mode
Drain-Source Voltage (Vdss) 68 V —
Continuous Drain Current (Id) 1.6 A —
Typical Operating Voltage 28 V —
Operating Frequency 880 MHz —
Output Power (Pout) 47 W (CW) —
Power Gain (Gps) 20 dB —
Encapsulado / Carcasa NI-860C3 (5-pin ceramic, flange mount) —
Tipo de montaje Through-Hole / Bolt-Down Surface/chassis mount (flange to heatsink)
Configuration Single, Flanged Common-source, single-ended
Nivel MSL [DATA_NEEDED: MSL level] —
Temperatura de funcionamiento -40C to +150C (TJ) —
Estado RoHS [DATA_NEEDED: RoHS status] [DATA_NEEDED: RoHS status]
Lead-Free [DATA_NEEDED: lead-free status] —
Polarization N-Channel —
Manufacturer — NXP Semiconductors (formerly Freescale)
Part Number — MRF6P9220HR3
Drain-Source Voltage (VDS) — 28 V typical
Test Frequency — 880 MHz
Typical Output Power (Pout) — 47 W (average, N-CDMA)
Power Gain (Gp) — 20 dB typical
Drain Current at Test (ID) — [DATA_NEEDED: drain current at Pout test]
Quiescent Bias Current (IDQ) — 1.6 A typical
Drain Efficiency — [DATA_NEEDED: efficiency at test]
Operating Frequency Range — Up to 1000 MHz (broadband, up to ~1 GHz typical)
Encapsulado — NI-860C3 (ceramic, flange-mount)
Application — Base-station PA, N-CDMA, industrial RF
Operating Mode — Enhancement mode

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