MRF6P9220HR5 vs MRF6P9220HR3 비교
다음의 상세 나란히 비교: MRF6P9220HR5 제조: NXP Semiconductors 및 MRF6P9220HR3 제조: NXP Semiconductors. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
사양 비교
| 파라미터 | MRF6P9220HR5 | MRF6P9220HR3 |
|---|---|---|
| 브랜드 | NXP Semiconductors | NXP Semiconductors |
| 카테고리 | MOSFETs | MOSFETs |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $91.20 | $58.40 |
| 트랜지스터 유형 | N-Channel RF Power MOSFET | N-Channel Lateral MOSFET (RF Power) |
| Technology | LDMOS (Laterally Diffused MOS) | LDMOS, enhancement-mode |
| Drain-Source Voltage (Vdss) | 68 V | — |
| Continuous Drain Current (Id) | 1.6 A | — |
| Typical Operating Voltage | 28 V | — |
| Operating Frequency | 880 MHz | — |
| Output Power (Pout) | 47 W (CW) | — |
| Power Gain (Gps) | 20 dB | — |
| 패키지 / 케이스 | NI-860C3 (5-pin ceramic, flange mount) | — |
| 실장 유형 | Through-Hole / Bolt-Down | Surface/chassis mount (flange to heatsink) |
| Configuration | Single, Flanged | Common-source, single-ended |
| MSL 레벨 | [DATA_NEEDED: MSL level] | — |
| 동작 온도 | -40C to +150C (TJ) | — |
| RoHS 상태 | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS status] |
| Lead-Free | [DATA_NEEDED: lead-free status] | — |
| Polarization | N-Channel | — |
| Manufacturer | — | NXP Semiconductors (formerly Freescale) |
| Part Number | — | MRF6P9220HR3 |
| Drain-Source Voltage (VDS) | — | 28 V typical |
| Test Frequency | — | 880 MHz |
| Typical Output Power (Pout) | — | 47 W (average, N-CDMA) |
| Power Gain (Gp) | — | 20 dB typical |
| Drain Current at Test (ID) | — | [DATA_NEEDED: drain current at Pout test] |
| Quiescent Bias Current (IDQ) | — | 1.6 A typical |
| Drain Efficiency | — | [DATA_NEEDED: efficiency at test] |
| Operating Frequency Range | — | Up to 1000 MHz (broadband, up to ~1 GHz typical) |
| 패키지 | — | NI-860C3 (ceramic, flange-mount) |
| Application | — | Base-station PA, N-CDMA, industrial RF |
| Operating Mode | — | Enhancement mode |