MRF6S23140HR3 vs MRF6S27085HR5 对比

详细并排对比 MRF6S23140HR3 出自 NXP Semiconductors 和 MRF6S27085HR5 出自 NXP Semiconductors。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

NXP Semiconductors
MRF6S23140HR3 MRF6S23140HR3 - 28W, 2.3GHz RF Power LDMOS | NXP Semiconductors

MRF6S23140HR3 - 28W, 2.3GHz RF Power LDMOS | NXP Semiconductors

MRF6S23140HR3 ✓ 量产中
NXP Semiconductors
MRF6S27085HR5 MRF6S27085HR5 - 20W RF Power LDMOS 2.7GHz NI-780 | NXP

MRF6S27085HR5 - 20W RF Power LDMOS 2.7GHz NI-780 | NXP

MRF6S27085HR5 ✓ 量产中

规格对比

参数 MRF6S23140HR3 MRF6S27085HR5
品牌 NXP Semiconductors NXP Semiconductors
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $65.00 $21.85
晶体管类型 LDMOS, N-Channel Enhancement-Mode LDMOS, N-Channel RF Power
Technology Lateral N-Channel RF Power MOSFET HV6 LDMOS
Drain-Source Voltage (Rated) 68 V —
Operating Drain Voltage (Typical) 28 V —
Test Quiescent Drain Current 1.3 A —
Operating Frequency Range 2300 MHz to 2400 MHz 2500 MHz to 2700 MHz
Test Frequency 2.39 GHz 2660 MHz
Output Power (Average, 2 x W-CDMA) 28 W —
Power Gain 15.2 dB —
Drain Efficiency [DATA_NEEDED: drain efficiency %] —
封装 / 外壳 NI-880H-2L (CASE 465B-03, STYLE 1) NI-780H-2L (ceramic acorn)
安装类型 Chassis / Flange Mount Chassis / Flange Mount
Configuration Single, push-pull capable —
Input Matching Internally matched (per datasheet) —
工作温度范围 [DATA_NEEDED: operating temperature range] —
RoHS 状态 [DATA_NEEDED: RoHS status] Compliant (per distributor listing)
Lead-Free [DATA_NEEDED: lead-free status] —
Rated Drain-Source Voltage (Vdss) — 68 V
Test Supply Voltage (Vdd) — 28 V
Test Quiescent Current (Idq) — 900 mA
Output Power (Pout) — 20 W (CW)
Small-Signal Gain — 15.5 dB at 2.66 GHz
引脚数量 — 2-lead + flange
Lead Free Status — Lead-free (per distributor listing)
Peak Reflow Temperature — 260 C
Time at Peak Reflow — 40 s maximum
Application — W-CDMA / multi-carrier base-station PA

数据手册与资源

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