MRF6S23140HR3 vs MRF6S27085HR5 Vergleich

Detaillierter Direktvergleich von MRF6S23140HR3 von NXP Semiconductors und MRF6S27085HR5 von NXP Semiconductors. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

NXP Semiconductors
MRF6S23140HR3 MRF6S23140HR3 - 28W, 2.3GHz RF Power LDMOS | NXP Semiconductors

MRF6S23140HR3 - 28W, 2.3GHz RF Power LDMOS | NXP Semiconductors

MRF6S23140HR3 ✓ Aktiv
NXP Semiconductors
MRF6S27085HR5 MRF6S27085HR5 - 20W RF Power LDMOS 2.7GHz NI-780 | NXP

MRF6S27085HR5 - 20W RF Power LDMOS 2.7GHz NI-780 | NXP

MRF6S27085HR5 ✓ Aktiv

Spezifikationsvergleich

Parameter MRF6S23140HR3 MRF6S27085HR5
Marke NXP Semiconductors NXP Semiconductors
Kategorie MOSFETs MOSFETs
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $65,00 $21,85
Transistortyp LDMOS, N-Channel Enhancement-Mode LDMOS, N-Channel RF Power
Technology Lateral N-Channel RF Power MOSFET HV6 LDMOS
Drain-Source Voltage (Rated) 68 V —
Operating Drain Voltage (Typical) 28 V —
Test Quiescent Drain Current 1.3 A —
Operating Frequency Range 2300 MHz to 2400 MHz 2500 MHz to 2700 MHz
Test Frequency 2.39 GHz 2660 MHz
Output Power (Average, 2 x W-CDMA) 28 W —
Power Gain 15.2 dB —
Drain Efficiency [DATA_NEEDED: drain efficiency %] —
Gehäuse / Bauform NI-880H-2L (CASE 465B-03, STYLE 1) NI-780H-2L (ceramic acorn)
Montageart Chassis / Flange Mount Chassis / Flange Mount
Configuration Single, push-pull capable —
Input Matching Internally matched (per datasheet) —
Betriebstemperaturbereich [DATA_NEEDED: operating temperature range] —
RoHS-Status [DATA_NEEDED: RoHS status] Compliant (per distributor listing)
Lead-Free [DATA_NEEDED: lead-free status] —
Rated Drain-Source Voltage (Vdss) — 68 V
Test Supply Voltage (Vdd) — 28 V
Test Quiescent Current (Idq) — 900 mA
Output Power (Pout) — 20 W (CW)
Small-Signal Gain — 15.5 dB at 2.66 GHz
Pin-Anzahl — 2-lead + flange
Lead Free Status — Lead-free (per distributor listing)
Peak Reflow Temperature — 260 C
Time at Peak Reflow — 40 s maximum
Application — W-CDMA / multi-carrier base-station PA

Datenblätter & Ressourcen

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