MRF6S23140HR3 vs MRF6S27085HR5 비교

다음의 상세 나란히 비교: MRF6S23140HR3 제조: NXP Semiconductors 및 MRF6S27085HR5 제조: NXP Semiconductors. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

NXP Semiconductors
MRF6S23140HR3 MRF6S23140HR3 - 28W, 2.3GHz RF Power LDMOS | NXP Semiconductors

MRF6S23140HR3 - 28W, 2.3GHz RF Power LDMOS | NXP Semiconductors

MRF6S23140HR3 ✓ 활성
NXP Semiconductors
MRF6S27085HR5 MRF6S27085HR5 - 20W RF Power LDMOS 2.7GHz NI-780 | NXP

MRF6S27085HR5 - 20W RF Power LDMOS 2.7GHz NI-780 | NXP

MRF6S27085HR5 ✓ 활성

사양 비교

파라미터 MRF6S23140HR3 MRF6S27085HR5
브랜드 NXP Semiconductors NXP Semiconductors
카테고리 MOSFETs MOSFETs
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $65.00 $21.85
트랜지스터 유형 LDMOS, N-Channel Enhancement-Mode LDMOS, N-Channel RF Power
Technology Lateral N-Channel RF Power MOSFET HV6 LDMOS
Drain-Source Voltage (Rated) 68 V —
Operating Drain Voltage (Typical) 28 V —
Test Quiescent Drain Current 1.3 A —
Operating Frequency Range 2300 MHz to 2400 MHz 2500 MHz to 2700 MHz
Test Frequency 2.39 GHz 2660 MHz
Output Power (Average, 2 x W-CDMA) 28 W —
Power Gain 15.2 dB —
Drain Efficiency [DATA_NEEDED: drain efficiency %] —
패키지 / 케이스 NI-880H-2L (CASE 465B-03, STYLE 1) NI-780H-2L (ceramic acorn)
실장 유형 Chassis / Flange Mount Chassis / Flange Mount
Configuration Single, push-pull capable —
Input Matching Internally matched (per datasheet) —
동작 온도 범위 [DATA_NEEDED: operating temperature range] —
RoHS 상태 [DATA_NEEDED: RoHS status] Compliant (per distributor listing)
Lead-Free [DATA_NEEDED: lead-free status] —
Rated Drain-Source Voltage (Vdss) — 68 V
Test Supply Voltage (Vdd) — 28 V
Test Quiescent Current (Idq) — 900 mA
Output Power (Pout) — 20 W (CW)
Small-Signal Gain — 15.5 dB at 2.66 GHz
핀 수 — 2-lead + flange
Lead Free Status — Lead-free (per distributor listing)
Peak Reflow Temperature — 260 C
Time at Peak Reflow — 40 s maximum
Application — W-CDMA / multi-carrier base-station PA

데이터시트 & 자료

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