MRF6S27085HR3 vs MRF6S27085HR5 对比

详细并排对比 MRF6S27085HR3 出自 NXP Semiconductors 和 MRF6S27085HR5 出自 NXP Semiconductors。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

NXP Semiconductors
MRF6S27085HR3 MRF6S27085HR3 - 20W RF Power MOSFET, 2.6-2.7GHz, 28V LDMOS

MRF6S27085HR3 - 20W RF Power MOSFET, 2.6-2.7GHz, 28V LDMOS

MRF6S27085HR3 ✓ 量产中
NXP Semiconductors
MRF6S27085HR5 MRF6S27085HR5 - 20W RF Power LDMOS 2.7GHz NI-780 | NXP

MRF6S27085HR5 - 20W RF Power LDMOS 2.7GHz NI-780 | NXP

MRF6S27085HR5 ✓ 量产中

规格对比

参数 MRF6S27085HR3 MRF6S27085HR5
品牌 NXP Semiconductors NXP Semiconductors
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $23.75 $21.85
Manufacturer NXP Semiconductors (formerly Freescale) —
Part Number MRF6S27085HR3 —
晶体管类型 LDMOS, N-Channel, Enhancement-Mode, Lateral LDMOS, N-Channel RF Power
Application RF Power Amplifier W-CDMA / multi-carrier base-station PA
Operating Frequency 2600 MHz to 2700 MHz —
Test Frequency 2.66 GHz 2660 MHz
Output Power (Average, P1dB-rated) 20 W —
Power Gain (Typ) 15.5 dB —
Drain-Source Voltage Rating 68 V —
Operating Drain Voltage 28 V —
Quiescent Bias Current (Test) 900 mA —
封装 / 外壳 NI-780H-2L (CASE 465-06, STYLE 1), ceramic flange mount NI-780H-2L (ceramic acorn)
引脚数量 3 (Drain, Gate, Source) 2-lead + flange
安装类型 Flange / Chassis mount with bolt-down thermal pad Chassis / Flange Mount
Packaging Tape & Reel (suffix HR3) —
Technology Lateral DMOS (LDMOS) HV6 LDMOS
RoHS 状态 Compliant per Freescale/NXP material declaration Compliant (per distributor listing)
Rated Drain-Source Voltage (Vdss) — 68 V
Test Supply Voltage (Vdd) — 28 V
Test Quiescent Current (Idq) — 900 mA
Operating Frequency Range — 2500 MHz to 2700 MHz
Output Power (Pout) — 20 W (CW)
Small-Signal Gain — 15.5 dB at 2.66 GHz
Lead Free Status — Lead-free (per distributor listing)
Peak Reflow Temperature — 260 C
Time at Peak Reflow — 40 s maximum

数据手册与资源

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