MRF6S27085HR3 vs MRF6S27085HR5 비교

다음의 상세 나란히 비교: MRF6S27085HR3 제조: NXP Semiconductors 및 MRF6S27085HR5 제조: NXP Semiconductors. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

NXP Semiconductors
MRF6S27085HR3 MRF6S27085HR3 - 20W RF Power MOSFET, 2.6-2.7GHz, 28V LDMOS

MRF6S27085HR3 - 20W RF Power MOSFET, 2.6-2.7GHz, 28V LDMOS

MRF6S27085HR3 ✓ 활성
NXP Semiconductors
MRF6S27085HR5 MRF6S27085HR5 - 20W RF Power LDMOS 2.7GHz NI-780 | NXP

MRF6S27085HR5 - 20W RF Power LDMOS 2.7GHz NI-780 | NXP

MRF6S27085HR5 ✓ 활성

사양 비교

파라미터 MRF6S27085HR3 MRF6S27085HR5
브랜드 NXP Semiconductors NXP Semiconductors
카테고리 MOSFETs MOSFETs
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $23.75 $21.85
Manufacturer NXP Semiconductors (formerly Freescale) —
Part Number MRF6S27085HR3 —
트랜지스터 유형 LDMOS, N-Channel, Enhancement-Mode, Lateral LDMOS, N-Channel RF Power
Application RF Power Amplifier W-CDMA / multi-carrier base-station PA
Operating Frequency 2600 MHz to 2700 MHz —
Test Frequency 2.66 GHz 2660 MHz
Output Power (Average, P1dB-rated) 20 W —
Power Gain (Typ) 15.5 dB —
Drain-Source Voltage Rating 68 V —
Operating Drain Voltage 28 V —
Quiescent Bias Current (Test) 900 mA —
패키지 / 케이스 NI-780H-2L (CASE 465-06, STYLE 1), ceramic flange mount NI-780H-2L (ceramic acorn)
핀 수 3 (Drain, Gate, Source) 2-lead + flange
실장 유형 Flange / Chassis mount with bolt-down thermal pad Chassis / Flange Mount
Packaging Tape & Reel (suffix HR3) —
Technology Lateral DMOS (LDMOS) HV6 LDMOS
RoHS 상태 Compliant per Freescale/NXP material declaration Compliant (per distributor listing)
Rated Drain-Source Voltage (Vdss) — 68 V
Test Supply Voltage (Vdd) — 28 V
Test Quiescent Current (Idq) — 900 mA
Operating Frequency Range — 2500 MHz to 2700 MHz
Output Power (Pout) — 20 W (CW)
Small-Signal Gain — 15.5 dB at 2.66 GHz
Lead Free Status — Lead-free (per distributor listing)
Peak Reflow Temperature — 260 C
Time at Peak Reflow — 40 s maximum

데이터시트 & 자료

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