MRF6S27085HR5 vs MRF6S23140HR3 对比

详细并排对比 MRF6S27085HR5 出自 NXP Semiconductors 和 MRF6S23140HR3 出自 NXP Semiconductors。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

NXP Semiconductors
MRF6S27085HR5 MRF6S27085HR5 - 20W RF Power LDMOS 2.7GHz NI-780 | NXP

MRF6S27085HR5 - 20W RF Power LDMOS 2.7GHz NI-780 | NXP

MRF6S27085HR5 ✓ 量产中
NXP Semiconductors
MRF6S23140HR3 MRF6S23140HR3 - 28W, 2.3GHz RF Power LDMOS | NXP Semiconductors

MRF6S23140HR3 - 28W, 2.3GHz RF Power LDMOS | NXP Semiconductors

MRF6S23140HR3 ✓ 量产中

规格对比

参数 MRF6S27085HR5 MRF6S23140HR3
品牌 NXP Semiconductors NXP Semiconductors
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $21.85 $65.00
晶体管类型 LDMOS, N-Channel RF Power LDMOS, N-Channel Enhancement-Mode
Technology HV6 LDMOS Lateral N-Channel RF Power MOSFET
Rated Drain-Source Voltage (Vdss) 68 V —
Test Supply Voltage (Vdd) 28 V —
Test Quiescent Current (Idq) 900 mA —
Operating Frequency Range 2500 MHz to 2700 MHz 2300 MHz to 2400 MHz
Test Frequency 2660 MHz 2.39 GHz
Output Power (Pout) 20 W (CW) —
Small-Signal Gain 15.5 dB at 2.66 GHz —
封装 / 外壳 NI-780H-2L (ceramic acorn) NI-880H-2L (CASE 465B-03, STYLE 1)
安装类型 Chassis / Flange Mount Chassis / Flange Mount
引脚数量 2-lead + flange —
Lead Free Status Lead-free (per distributor listing) —
Peak Reflow Temperature 260 C —
Time at Peak Reflow 40 s maximum —
RoHS 状态 Compliant (per distributor listing) [DATA_NEEDED: RoHS status]
Application W-CDMA / multi-carrier base-station PA —
Drain-Source Voltage (Rated) — 68 V
Operating Drain Voltage (Typical) — 28 V
Test Quiescent Drain Current — 1.3 A
Output Power (Average, 2 x W-CDMA) — 28 W
Power Gain — 15.2 dB
Drain Efficiency — [DATA_NEEDED: drain efficiency %]
Configuration — Single, push-pull capable
Input Matching — Internally matched (per datasheet)
工作温度范围 — [DATA_NEEDED: operating temperature range]
Lead-Free — [DATA_NEEDED: lead-free status]

数据手册与资源

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