MRF6S27085HR5 vs MRF6S23140HR3 비교
다음의 상세 나란히 비교: MRF6S27085HR5 제조: NXP Semiconductors 및 MRF6S23140HR3 제조: NXP Semiconductors. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
NXP Semiconductors
MRF6S23140HR3 - 28W, 2.3GHz RF Power LDMOS | NXP Semiconductors
MRF6S23140HR3 ✓ 활성사양 비교
| 파라미터 | MRF6S27085HR5 | MRF6S23140HR3 |
|---|---|---|
| 브랜드 | NXP Semiconductors | NXP Semiconductors |
| 카테고리 | MOSFETs | MOSFETs |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $21.85 | $65.00 |
| 트랜지스터 유형 | LDMOS, N-Channel RF Power | LDMOS, N-Channel Enhancement-Mode |
| Technology | HV6 LDMOS | Lateral N-Channel RF Power MOSFET |
| Rated Drain-Source Voltage (Vdss) | 68 V | — |
| Test Supply Voltage (Vdd) | 28 V | — |
| Test Quiescent Current (Idq) | 900 mA | — |
| Operating Frequency Range | 2500 MHz to 2700 MHz | 2300 MHz to 2400 MHz |
| Test Frequency | 2660 MHz | 2.39 GHz |
| Output Power (Pout) | 20 W (CW) | — |
| Small-Signal Gain | 15.5 dB at 2.66 GHz | — |
| 패키지 / 케이스 | NI-780H-2L (ceramic acorn) | NI-880H-2L (CASE 465B-03, STYLE 1) |
| 실장 유형 | Chassis / Flange Mount | Chassis / Flange Mount |
| 핀 수 | 2-lead + flange | — |
| Lead Free Status | Lead-free (per distributor listing) | — |
| Peak Reflow Temperature | 260 C | — |
| Time at Peak Reflow | 40 s maximum | — |
| RoHS 상태 | Compliant (per distributor listing) | [DATA_NEEDED: RoHS status] |
| Application | W-CDMA / multi-carrier base-station PA | — |
| Drain-Source Voltage (Rated) | — | 68 V |
| Operating Drain Voltage (Typical) | — | 28 V |
| Test Quiescent Drain Current | — | 1.3 A |
| Output Power (Average, 2 x W-CDMA) | — | 28 W |
| Power Gain | — | 15.2 dB |
| Drain Efficiency | — | [DATA_NEEDED: drain efficiency %] |
| Configuration | — | Single, push-pull capable |
| Input Matching | — | Internally matched (per datasheet) |
| 동작 온도 범위 | — | [DATA_NEEDED: operating temperature range] |
| Lead-Free | — | [DATA_NEEDED: lead-free status] |