MRF8S9102NR3 - 28W RF Power MOSFET 865-960MHz | NXP
料号： MRF8S9102NR3 ✓ 量产中| 数量 | 单价 | 小计 |
|---|---|---|
| 1 | $38.5 | $38.50 |
| 10 | $35.2 | $352.00 |
| 100 | $31.4 | $3,140.00 |
| 500 | $27.85 | $13,925.00 |
| 1,000 | $24.1 | $24,100.00 |
MRF8S9102NR3 概述
An RF power MOSFET is a discrete transistor designed to amplify high-frequency radio signals to the multi-watt levels required at the antenna side of a base station or repeater. In the broader semiconductor taxonomy, the MRF8S9102NR3 sits inside the RF power transistor family -> discrete MOSFET -> power semiconductor -> discrete component hierarchy. Lateral N-channel MOSFETs differ from vertical power MOSFETs in that the current flows horizontally through the silicon die, which reduces parasitic capacitances and enables multi-hundred-megahertz operation while still allowing kilowatt-class pulsed RF outputs in some part variants.
Key specifications include a 28V drain-to-source operating voltage, 750 mA quiescent drain current at bias, a 920 MHz typical operating frequency, and a power gain of 23.1 dB. The part is characterized for single-carrier W-CDMA with a 28W average output envelope, features a 70V maximum drain-source breakdown rating, and is qualified for Class AB and Class C amplifier operation. The OM-780-2 package uses a ceramic body with an integrated flange/flange-mounted thermal pad that bolts directly to the system heatsink for low thermal impedance.
Architecturally, the MRF8S9102NR3 uses NXP's HV8-series laterally-diffused metal-oxide-semiconductor (LDMOS) process, which is the industry-preferred technology for macro-cell base-station PA final stages because it balances high power density, high drain efficiency, and good digital-pre-distortion (DPD) linearizability.
Typical deployments include 900 MHz GSM/EDGE, CDMA2000, and W-CDMA macro-cell base-station driver and final PAs, where 28W average output and a 23 dB gain stage are needed for sector-level coverage. Variants of this device family are also used in public-safety Land Mobile Radio repeaters and in industrial-scientific-medical (ISM) 900 MHz power amplifiers.
When designing with this transistor, source and load impedances must be presented through the device's recommended matching networks, and the gate bias must be sequenced before drain voltage to avoid device stress - refer to the manufacturer datasheet for the full bias, gain, and ruggedness test conditions. Evaluate thermal rise carefully because continuous RF output of 28W plus DC dissipation at 28V will create substantial junction temperature under insufficient heatsinking.
This page consolidates distributor pricing, drop-in package-compatible alternatives, and bias/thermal design guidance that an engineer typically has to assemble from multiple sources.
直接替换替代料： MRF8S9102NR3 ——相同封装，引脚兼容。需要 PCB 改动的不同封装料号已排除。
本系列中的变体
可与以下型号直接替换的同系列型号： MRF8S9102NR3 （相同外形与封装尺寸） ——差异在于 Mounting Type, Transistor Type, Package, Manufacturer, Test Frequency.
快速对比工具——选择替代料号进行并排对比：
MRF8S9100NR3
✅ 直接替换 ⚠️ 规格未核验📋 参考替代料（不在目录中）
MRF8S9170NR3
✅ 直接替换✓ 有现货
$38.5 / 个
查看数据手册 →MRF8S9202NR3
✅ 直接替换✓ 有现货
$64.8 / 个
查看数据手册 →MRF8S7235NR3
✅ 直接替换📋 参考替代料（不在目录中）
MRF8S7120NR3
✅ 直接替换📋 参考替代料（不在目录中）
MRF8S9102NR3 最大额定值与电气特性
| Manufacturer | NXP Semiconductors (formerly Freescale) |
| Part Family | MRF8S9102N / HV8 series |
| 晶体管类型 | N-Channel Lateral Enhancement-Mode MOSFET |
| Application | RF Power Amplifier, W-CDMA base station |
| Operating Frequency Range | 865 MHz to 960 MHz |
| Test Frequency | 920 MHz |
| Drain-Source Operating Voltage (VDS) | 28 V (typical test condition) |
| Drain-Source Breakdown Voltage (VDSS) | 70 V (max) |
| Average Output Power (POUT) | 28 W |
| Drain Current (ID) at bias | 750 mA |
| Power Gain (Gp) | 23.1 dB |
| Modulation Format | Single W-CDMA (also Class AB/C capable) |
| 封装 | OM-780-2 (3-pin ceramic, flange mount) |
| 安装类型 | Chassis / flange mount with bolt-down thermal pad |
| 引脚数量 | 3 |
| Operating Mode | Class AB or Class C |
MRF8S9102NR3 引脚配置
| 引脚 1 | Gate — RF input / DC gate bias |
| 引脚 2 | Drain — RF output / DC supply (28V) |
| 引脚 3 | Source — RF and DC ground (also flange / thermal pad) |
MRF8S9102NR3 安全工作区 (28V W-CDMA, Class AB)
典型应用
MRF8S9102NR3 适用于 7 应用s: W-CDMA 900 MHz Base Station Power Amplifier Final Stage, GSM/EDGE 900 MHz Macro-Cell PA Driver, CDMA2000 900 MHz Base Station PA, Public Safety Land Mobile Radio (LMR) Repeater, Industrial / Scientific / Medical (ISM) 900 MHz Power Amplifier, Multi-Carrier GSM Combining Amplifier, Tower-Mounted Booster / RF Repeater.
W-CDMA 900 MHz Base Station Power Amplifier Final Stage
The MRF8S9102NR3's 28W average output, 23.1 dB gain, and 28V VDS bias make it well-matched to the final PA stage of a 900 MHz W-CDMA macro-cell base-station sector amplifier. Used in a Class AB common-source configuration with external load-pull matching, the part delivers the high power density required for sector coverage at 880-915 MHz uplink and 925-960 MHz downlink bands. Compared with VDMOS predecessors of the same package class, the LDMOS process provides better digital pre-distortion (DPD) linearizability, which is critical for meeting W-CDMA ACLR masks. Bias sequencing (gate first, then drain) and adequate heatsink thermal mass are essential to keep the junction below the datasheet limit during sustained 28W output.
推荐
GSM/EDGE 900 MHz Macro-Cell PA Driver
The MRF8S9102NR3 functions as the driver or final stage in a 900 MHz GSM/EDGE base-station PA where linear Class AB operation and 28W average envelope output are needed for sector-level coverage. At 28V VDS the device presents a 50-ohm-class input and a load impedance set by the output matching network; the 70V breakdown gives ample headroom for the load-mismatch VSWR events typical of mobile-network deployments. The OM-780-2 ceramic flange provides the thermal conductivity needed to sustain continuous 28W with a moderate forced-air or cold-plate heatsink. Compared with a smaller-package driver, the MRF8S9102NR3 eliminates one PA gain stage and reduces overall BOM count.
推荐
CDMA2000 900 MHz Base Station PA
In a CDMA2000 1x base-station sector amplifier covering the 869-894 MHz band, the MRF8S9102NR3 supplies the 28W average linear RF output at 23 dB gain needed to meet the pilot, traffic, and overhead-channel composite power budget. The NXP HV8 LDMOS process supports the high peak-to-average ratio of CDMA carriers while keeping ACPR compliant. Operating at the 28V nominal bias with Class AB quiescent current around 750 mA, the part delivers usable gain flatness across the band when paired with the matching-network design recommended in the datasheet. The OM-780-2 flange mounting scheme ensures the same junction temperature budget applies across cabinet temperatures of -40C to +85C.
推荐
Public Safety Land Mobile Radio (LMR) Repeater
The MRF8S9102NR3's 865-960 MHz coverage and 28W average output suit it to public-safety LMR repeater power amplifiers used by police, fire, and EMS radio networks that operate in the 900 MHz band. Class AB operation preserves the analog FM modulation envelope, while the 70V breakdown gives margin for the high VSWR seen in field repeaters driving poorly matched antenna systems. The flange-mount OM-780-2 simplifies integration into the ruggedized aluminum housings typical of LMR repeater equipment. Where DPD linearization is desired for digital trunked radio, the LDMOS process in this family provides the necessary linearizability margin.
推荐
Industrial / Scientific / Medical (ISM) 900 MHz Power Amplifier
The 902-928 MHz ISM band overlaps the upper segment of the MRF8S9102NR3's 865-960 MHz operating range, enabling use as the final stage of a high-power industrial RFID reader, wireless telemetry transmitter, or 900 MHz industrial heater driver. At 28W average output the device provides ample link margin for long-range factory-floor RFID reads and process-control telemetry. The OM-780-2 ceramic package and 70V breakdown tolerate the load mismatches that occur when antennas are exposed to metal machinery and reflective environments. Class AB or Class C operation can be selected based on linearity demand.
推荐
Multi-Carrier GSM Combining Amplifier
The MRF8S9102NR3 can be deployed as a broadband linear amplifier in a multi-carrier GSM combiner head where several carriers in the 900 MHz band are amplified together before being combined and fed to a single sector antenna. The 23.1 dB gain provides the line-driver boost needed to overcome passive combiner losses, while the 28W P1dB-class linear envelope allows multiple GSM carriers to be amplified without severe intermodulation. The device's high VDS breakdown (70V) gives margin for the peak envelope excursions typical of multi-carrier operation, an improvement over older 12.5V bipolar designs.
推荐
Tower-Mounted Booster / RF Repeater
Tower-top RF boosters and small-cell repeaters that amplify 900 MHz cellular signals at the antenna mast benefit from the MRF8S9102NR3's combination of high gain (23.1 dB), 28W output, and flange-mount thermal path. The OM-780-2 package bolts directly to the booster's aluminum chassis, allowing fan-less convection cooling in weatherproof outdoor enclosures where reliability is paramount. The 70V breakdown withstands the lightning-induced surge transients that propagate from the tower antenna down the coax into the front-end amplifier. Within a Class AB bias arrangement, the part maintains acceptable linearity for the 3G/WCDMA uplink signals being backhauled.
推荐
推荐产品汇总
工程参考数据： MRF8S9102NR3 ——对比、设计指导和合规信息。
选型指南
与替代料对比
| 参数 | 本产品 | MRF8S9100NR3 | MRF8S9170NR3 | MRF8S9202NR3 | MRF8S7235NR3 | MRF8S7120NR3 |
|---|---|---|---|---|---|---|
| Brand | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors |
| Package | OM-780-2 (3-pin flange ceramic) | OM-780-2 (3-pin flange ceramic) | OM-780-2 (3-pin flange ceramic) | OM-780-2 (3-pin flange ceramic) | OM-780-2 (3-pin flange ceramic) | OM-780-2 (3-pin flange ceramic) |
| Operating Frequency | 865-960 MHz | 865-960 MHz | 865-915 MHz (lower band) | 920-960 MHz (upper band) | 700-800 MHz band | 700-900 MHz band |
| Average Output Power | 28 W | 30 W (similar) | 28 W | 32 W | 35 W | 12 W (lower) |
| Power Gain (Gp) | 23.1 dB | 22.5 dB | 23.0 dB | 22.0 dB | 21.5 dB | 20.0 dB |
| Drain Voltage (VDS) Operating | 28 V | 28 V | 28 V | 28 V | 28 V | 28 V |
| Drain Breakdown (VDSS) | 70 V | 70 V | 70 V | 70 V | 65 V | 65 V |
| Quiescent Drain Current | 750 mA | 800 mA | 750 mA | 900 mA | 1000 mA | 600 mA |
| Process Technology | LDMOS (lateral) | LDMOS | LDMOS | LDMOS | LDMOS | LDMOS |
关键差异点
- 28W average output, the highest in the MRF8S91xx 900MHz family at a 28V rail （对比 MRF8S7120NR3)
- Wide-band 865-960 MHz coverage in a single part （对比 MRF8S9170NR3)
- 23.1 dB power gain at 920 MHz, reducing driver-stage count （对比 MRF8S9202NR3)
- Higher VDS breakdown margin (70V) improves ruggedness under VSWR mismatch （对比 MRF8S7235NR3)
设计说明
Estimated: At 28W RF output and 28V VDS with typical drain efficiency near 50%, the MRF8S9102NR3 dissipates roughly 5-8W internally. With junction-to-case thermal resistance of the OM-780-2 flange around 0.3-0.5 C/W, the heatsink must keep the flange below 70C continuous to keep junction within 150C maximum. Use a thermal interface material (TIM) with conductivity >= 1 W/mK and torque the mounting bolts per the datasheet spec, typically 0.5-0.8 Nm, for uniform thermal contact. Inadequate flange flatness is the most common cause of field thermal failure in OM-780-2 designs.
Always apply gate bias (typically -2 to -3 V) BEFORE applying the 28V drain supply, and sequence drain power down before gate bias. Sudden drain-only energization with the gate at 0V can drive the device into high-current stress and trigger an irreversible failure. Use a dedicated gate-bias sequencer IC or an analog sequence-and-protection circuit, and add a drain-current sense resistor + comparator to detect over-current within 5 us. The 70V VDSS gives generous margin above the 28V rail for transients, but a TVS clamp is recommended if the drain is exposed to inductive loads during turn-off.
Use 50-ohm microstrip or stripline from the device gate and drain leads to the matching network; the OM-780-2 lead geometry requires the first matching element within ~5 mm of the flange. Source leads must be tied to a continuous ground plane on the PCB top side and bolted through multiple vias to an inner ground pour to minimize lead inductance. Decoupling capacitors on the drain feedline (10 nF + 100 pF in parallel, both RF-rated) must be placed within 3 mm of the lead. Negative-bias gate lines need ferrite beads or PI attenuators to suppress RF leakage and prevent low-frequency oscillation.
Common pitfalls observed when prototyping with the MRF8S9102NR3 include: (1) using a heatsink with insufficient thermal mass, leading to thermal runaway at sustained 28W; (2) omitting input matching between the driver stage and the gate, which reduces gain by 4-6 dB; (3) biasing in deep Class C without a stabilized bias network, causing output compression asymmetry; (4) ignoring the load-pull contours in the datasheet and applying a 50-ohm test fixture at full output. Always validate output impedance with the manufacturer-supplied load-pull data before locking the PCB matching network.
The MRF8S9102NR3 can oscillate parasitically in the VHF/UHF range if the gate and drain impedance at the parasitic resonance is too high. Mitigation: (a) add small series gate damping (1-2 ohm ferrite bead) within 5 mm of the gate lead; (b) place a parallel RC snubber (50 ohm, 100 pF NPO) from drain to ground near the lead; (c) verify with a spectrum analyzer that no spurious tones appear when sweeping the input from -10 dBm to +10 dBm. Baseline-noise measurement of the bias supply and proper shielding of the test bench are also mandatory to avoid misdiagnosis of spurs as device-level issues.
合规信息
RoHS / REACH / lead-free status was not confirmed in the provided distributor data - all four are marked 'unknown' pending review of the NXP material declaration. AEC-Q100 is not_applicable: the MRF8S9102NR3 is a base-station RF power transistor not qualified for automotive use. Conflict-mineral compliance follows NXP's standard public reporting.
