MRFG35010NT1 vs MRFG35003NT1 对比
详细并排对比 MRFG35010NT1 出自 NXP Semiconductors 和 MRFG35003NT1 出自 NXP Semiconductors。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | MRFG35010NT1 | MRFG35003NT1 |
|---|---|---|
| 品牌 | NXP Semiconductors | NXP Semiconductors |
| 分类 | MOSFETs | Transistors |
| 生命周期状态 | Obsolete | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $25.95 | $12.10 |
| Manufacturer | NXP Semiconductors (formerly Freescale Semiconductor) | NXP Semiconductors (formerly Freescale) |
| Part Number | MRFG35010NT1 | — |
| 晶体管类型 | GaAs pHEMT RF Power FET | GaAs pHEMT N-channel RF Power FET |
| Drain-Source Voltage Rating (Vds) | 15 V | — |
| Continuous Drain Current Rating | 2.9 A | — |
| Operating Frequency | 3.55 GHz | — |
| Frequency Range | 1.8 GHz to 3.6 GHz | 1.8 GHz to 3.6 GHz |
| Test Voltage | 12 V | — |
| Test Current (quiescent) | 180 mA | — |
| Associated Power Gain | 10 dB at 3.55 GHz | — |
| Output Power | 9 W at 3.55 GHz | — |
| Configuration | Unmatched, common source | — |
| Class of Operation | Class AB linear | — |
| 封装 / 外壳 | PLD-1.5 flanged ceramic | PLD-1.5 (CASE 466-03, Style 1) |
| Supplier Device Package | PLD-1.5 | — |
| 安装类型 | Chassis-mount / flange-bolt | Surface Mount |
| Lead Free Status | Lead free (per datasheet) | — |
| RoHS 状态 | [DATA_NEEDED: RoHS status] | Compliant |
| Technology | — | Gallium Arsenide Pseudomorphic HEMT |
| Test Frequency | — | 3.55 GHz |
| Rated Drain Voltage (VDS max) | — | 15 V |
| Continuous Drain Current | — | 1.3 A |
| Output Power (CW, typical) | — | 3 W |
| Power Gain (Gpss, min) | — | 11.5 dB at 3.55 GHz |
| Test Bias Voltage | — | 12 V |
| Test Quiescent Current (IDQ) | — | 55 mA (small-signal); 650 mA (W-CDMA pulsed) |
| Operating Class | — | Class AB linear |
| Matching | — | Unmatched (external matching network required) |
| Maximum Channel Temperature | — | 150 °C |