MRFG35010NT1 vs MRFG35003NT1 비교
다음의 상세 나란히 비교: MRFG35010NT1 제조: NXP Semiconductors 및 MRFG35003NT1 제조: NXP Semiconductors. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
사양 비교
| 파라미터 | MRFG35010NT1 | MRFG35003NT1 |
|---|---|---|
| 브랜드 | NXP Semiconductors | NXP Semiconductors |
| 카테고리 | MOSFETs | Transistors |
| 수명 주기 상태 | Obsolete | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $25.95 | $12.10 |
| Manufacturer | NXP Semiconductors (formerly Freescale Semiconductor) | NXP Semiconductors (formerly Freescale) |
| Part Number | MRFG35010NT1 | — |
| 트랜지스터 유형 | GaAs pHEMT RF Power FET | GaAs pHEMT N-channel RF Power FET |
| Drain-Source Voltage Rating (Vds) | 15 V | — |
| Continuous Drain Current Rating | 2.9 A | — |
| Operating Frequency | 3.55 GHz | — |
| Frequency Range | 1.8 GHz to 3.6 GHz | 1.8 GHz to 3.6 GHz |
| Test Voltage | 12 V | — |
| Test Current (quiescent) | 180 mA | — |
| Associated Power Gain | 10 dB at 3.55 GHz | — |
| Output Power | 9 W at 3.55 GHz | — |
| Configuration | Unmatched, common source | — |
| Class of Operation | Class AB linear | — |
| 패키지 / 케이스 | PLD-1.5 flanged ceramic | PLD-1.5 (CASE 466-03, Style 1) |
| Supplier Device Package | PLD-1.5 | — |
| 실장 유형 | Chassis-mount / flange-bolt | Surface Mount |
| Lead Free Status | Lead free (per datasheet) | — |
| RoHS 상태 | [DATA_NEEDED: RoHS status] | Compliant |
| Technology | — | Gallium Arsenide Pseudomorphic HEMT |
| Test Frequency | — | 3.55 GHz |
| Rated Drain Voltage (VDS max) | — | 15 V |
| Continuous Drain Current | — | 1.3 A |
| Output Power (CW, typical) | — | 3 W |
| Power Gain (Gpss, min) | — | 11.5 dB at 3.55 GHz |
| Test Bias Voltage | — | 12 V |
| Test Quiescent Current (IDQ) | — | 55 mA (small-signal); 650 mA (W-CDMA pulsed) |
| Operating Class | — | Class AB linear |
| Matching | — | Unmatched (external matching network required) |
| Maximum Channel Temperature | — | 150 °C |