MT25QU512ABB8E12-0AUT vs MT25QU01GBBB8E12-0AUT 对比

详细并排对比 MT25QU512ABB8E12-0AUT 出自 Micron Technology 和 MT25QU01GBBB8E12-0AUT 出自 Micron Technology。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Micron Technology
MT25QU512ABB8E12-0AUT MT25QU512ABB8E12-0AUT - 512Mb SPI NOR Flash 133MHz | Micron

MT25QU512ABB8E12-0AUT - 512Mb SPI NOR Flash 133MHz | Micron

MT25QU512ABB8E12-0AUT ✓ 量产中
Micron Technology
MT25QU01GBBB8E12-0AUT MT25QU01GBBB8E12-0AUT - 1Gb SPI NOR Flash 133MHz | Micron

MT25QU01GBBB8E12-0AUT - 1Gb SPI NOR Flash 133MHz | Micron

MT25QU01GBBB8E12-0AUT ✓ 量产中

规格对比

参数 MT25QU512ABB8E12-0AUT MT25QU01GBBB8E12-0AUT
品牌 Micron Technology Micron Technology
分类 Memory ICs Memory ICs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.00 $7.10
存储器类型 FLASH - NOR Memory IC NOR Flash, Serial (SPI)
Density 512 Mbit (64M x 8) 1 Gbit (128 MB)
接口 SPI - Quad I/O SPI, Dual SPI, Quad SPI
Max Clock Frequency 133 MHz 133 MHz
电源电压 1.8 V 1.8 V
工作温度 -40C to +125C -40C to +125C
封装 24-T-PBGA (6x8 mm) 24-T-PBGA (6x8 mm)
FBGA Code RW299 RW320
安装类型 Surface Mount Surface Mount
Sector Erase Sizes 4KB, 32KB, 64KB —
Execute-In-Place (XIP) Yes —
Write Protection Advanced block protection Hardware write protection; Software write protection; Write enable latch
Addressing 3-byte and extended address access —
Series MT25Q —
AEC-Q100 512 Mbit automotive-grade serial NOR (per Newark listing: AEC-Q100) —
Product Longevity Program No No
RoHS 状态 [DATA_NEEDED: RoHS status] [DATA_NEEDED: RoHS status]
存储组织 — x1 / x2 / x4 (I/O width)
Access Time — 6 ns
Automotive Qualification — AEC-Q100 qualified
MSL 等级 — [DATA_NEEDED: MSL level]
Program/Erase Endurance — [DATA_NEEDED: endurance cycles]
Data Retention — [DATA_NEEDED: retention years]

数据手册与资源

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