MT40A1G8SA-075:E vs K4A8G085WB-BIWE 对比
详细并排对比 MT40A1G8SA-075:E 出自 Micron Technology 和 K4A8G085WB-BIWE 出自 Samsung Electronics。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | MT40A1G8SA-075:E | K4A8G085WB-BIWE |
|---|---|---|
| 品牌 | Micron Technology | Samsung Electronics |
| 分类 | Memory ICs | Memory ICs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $6.30 | $6.50 |
| 存储器类型 | SDRAM - DDR4 | DDR4 SDRAM |
| 存储容量 | 8Gbit (1G x 8) | 8 Gb |
| 接口 | Parallel | — |
| Clock Frequency | 1.33 GHz | — |
| 数据速率 | 2666 MT/s | 3200 Mbps |
| Supply Voltage (VDD/VDDQ) | 1.2V ±60mV | — |
| VPP Supply Voltage | 2.5V (-125mV, +250mV) | — |
| 工作温度范围 | 0°C to +95°C | — |
| Refresh Time | 64ms at -40°C to 85°C, 32ms at >85°C to 95°C, 16ms at >95°C to 105°C | — |
| 封装 | 78-FBGA (7.5x11 mm) | 78-FBGA |
| 安装类型 | Surface Mount | Surface Mount |
| Write Leveling | Supported | — |
| Dynamic On-Chip Termination | Supported | — |
| CRC Function | Supported | — |
| Data Mask Function | Supported | — |
| RoHS 状态 | Compliant | Compliant |
| Memory Organization | — | 1G x 8 |
| 电源电压 | — | 1.2 V |
| 工作温度 | — | 0°C to +85°C |
| Memory Interface | — | Parallel |
| Access Time | — | [DATA_NEEDED: tRCD, tRP, tRAS] |
| CAS 延迟 | — | [DATA_NEEDED: CL value] |
| Refresh | — | Auto-refresh, self-refresh |
| Lead-Free | — | Yes |
| 无卤 | — | Yes |