MT40A256M16GE-075E:B vs MT40A256M16GE-083E 对比
详细并排对比 MT40A256M16GE-075E:B 出自 Micron Technology 和 MT40A256M16GE-083E 出自 Micron Technology。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
Micron Technology
MT40A256M16GE-075E:B - 4Gb DDR4 SDRAM 2666 MT/s | Micron
MT40A256M16GE-075E:B ✓ 量产中Micron Technology
MT40A256M16GE-083E - DDR4 4Gb 256Mx16 2400MHz DRAM | Micron
MT40A256M16GE-083E ✗ 停产规格对比
| 参数 | MT40A256M16GE-075E:B | MT40A256M16GE-083E |
|---|---|---|
| 品牌 | Micron Technology | Micron Technology |
| 分类 | Memory ICs | Memory ICs |
| 生命周期状态 | 有效 | 停产 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $3.95 | $2.20 |
| 存储器类型 | DDR4 SDRAM | DDR4 SDRAM |
| 存储容量 | 4 Gbit | — |
| 存储组织 | 256M x 16 | 256M x 16 |
| Memory Interface | Parallel | — |
| Clock Frequency | 1.33 GHz | 1200 MHz (DDR4-2400) |
| 数据速率 | 2666 MT/s (DDR4-2666) | — |
| VDD / VDDQ | 1.2 V +/-60 mV | — |
| VPP | 2.5 V, -125 mV/+250 mV | — |
| Internal Banks | 16 | — |
| Refresh | 64 ms / 8192-cycle; 32 ms / 8192-cycle at 95C | [DATA_NEEDED: refresh rate] |
| I/O Type | 1.2 V pseudo open-drain | — |
| VREFDQ | On-die, internal, adjustable generation | — |
| Special Features | Temperature controlled refresh (TCR) | — |
| 封装 | 96-FBGA (9 x 14 mm) | 96-ball FBGA, 9 x 14 mm |
| 安装类型 | Surface Mount | Surface Mount |
| 工作温度 | [DATA_NEEDED: operating temperature range for standard grade] | [DATA_NEEDED: operating temperature range] |
| Access Time | [DATA_NEEDED: CAS latency / access time] | — |
| Density | — | 4 Gbit |
| 电源电压 | — | 1.2 V |
| 接口 | — | Parallel |
| Technology | — | CMOS DRAM |
| ECCN | — | EAR99 |
| Country of Origin | — | China |
| 无卤 | — | Compliant |
| Lead Free | — | Yes |
| Introduction Date | — | August 2017 |
| Lifecycle | — | Obsolete / End of Life (per distributor cross-reference data) |
| CAS 延迟 | — | [DATA_NEEDED: CAS latency at DDR4-2400] |