MT40A2G8AG-062E vs H5ANAG8NCMR-VKC 对比

详细并排对比 MT40A2G8AG-062E 出自 Micron Technology 和 H5ANAG8NCMR-VKC 出自 SK hynix。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Micron Technology
MT40A2G8AG-062E MT40A2G8AG-062E - 16Gb DDR4 SDRAM 2Gx8 3200Mbps | Micron

MT40A2G8AG-062E - 16Gb DDR4 SDRAM 2Gx8 3200Mbps | Micron

MT40A2G8AG-062E ✓ 量产中
SK hynix
H5ANAG8NCMR-VKC H5ANAG8NCMR-VKC - 16Gb DDR4-2666 x8 DRAM FBGA | SK hynix

H5ANAG8NCMR-VKC - 16Gb DDR4-2666 x8 DRAM FBGA | SK hynix

H5ANAG8NCMR-VKC ✓ 量产中

规格对比

参数 MT40A2G8AG-062E H5ANAG8NCMR-VKC
品牌 Micron Technology SK hynix
分类 Memory ICs Memory ICs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $9.75 $8.05
存储器类型 DDR4 SDRAM DDR4 SDRAM
Density 16 Gbit —
存储组织 2G x 8 —
Speed DDR4-3200 (3200 MT/s) —
Clock Frequency 1600 MHz —
Access Time (Clock Cycle Time) 0.625 ns (tCK) —
CAS 延迟 CL22 (DDR4-3200) [DATA_NEEDED: CAS latency for VK speed bin]
Access Time 19 ns —
Supply Voltage VDD 1.2 V —
I/O Interface POD12 (1.2 V pseudo-open drain) —
VPP Voltage 2.5 V —
Number of Banks 16 (4 bank groups x 4 banks) —
Operating Temperature (AUT grade) -40C to +95C (per Micron grade table) —
封装 78-FBGA (7.5 x 11 mm) FBGA-78
安装类型 Surface Mount Surface Mount
RoHS 状态 Compliant [DATA_NEEDED: RoHS status]
Die Revision AG (current generation) —
存储容量 — 16 Gb
Memory Organization — 2G x 8
数据速率 — 2666 Mbps/pin (DDR4-2666)
Supply Voltage (VDD) — 1.2 V
I/O Voltage (VDDQ) — 1.2 V
Speed Grade — VK (per SK hynix speed-bin suffix)
Power Class — Normal Power
Bank Groups — 4
Banks Total — 16
工作温度 — [DATA_NEEDED: operating temperature range]
Packaging — [DATA_NEEDED: standard packing quantity]
Manufacturer Process — CMOS DRAM

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