MT40A2G8AG-062E vs H5ANAG8NCMR-XNI 对比

详细并排对比 MT40A2G8AG-062E 出自 Micron Technology 和 H5ANAG8NCMR-XNI 出自 SK hynix。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Micron Technology
MT40A2G8AG-062E MT40A2G8AG-062E - 16Gb DDR4 SDRAM 2Gx8 3200Mbps | Micron

MT40A2G8AG-062E - 16Gb DDR4 SDRAM 2Gx8 3200Mbps | Micron

MT40A2G8AG-062E ✓ 量产中
SK hynix
H5ANAG8NCMR-XNI H5ANAG8NCMR-XNI - 16Gb DDR4 SDRAM 3200Mbps | SK Hynix

H5ANAG8NCMR-XNI - 16Gb DDR4 SDRAM 3200Mbps | SK Hynix

H5ANAG8NCMR-XNI ✓ 量产中

规格对比

参数 MT40A2G8AG-062E H5ANAG8NCMR-XNI
品牌 Micron Technology SK hynix
分类 Memory ICs Memory ICs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $9.75 $4.15
存储器类型 DDR4 SDRAM Volatile (DRAM)
Density 16 Gbit —
存储组织 2G x 8 —
Speed DDR4-3200 (3200 MT/s) —
Clock Frequency 1600 MHz —
Access Time (Clock Cycle Time) 0.625 ns (tCK) —
CAS 延迟 CL22 (DDR4-3200) —
Access Time 19 ns —
Supply Voltage VDD 1.2 V —
I/O Interface POD12 (1.2 V pseudo-open drain) —
VPP Voltage 2.5 V —
Number of Banks 16 (4 bank groups x 4 banks) —
Operating Temperature (AUT grade) -40C to +95C (per Micron grade table) —
封装 78-FBGA (7.5 x 11 mm) FBGA-78
安装类型 Surface Mount Surface Mount
RoHS 状态 Compliant [DATA_NEEDED: RoHS status]
Die Revision AG (current generation) —
Memory Format — DDR4 SDRAM
存储容量 — 16 Gb
Memory Organization — x8
接口 — Parallel
数据速率 — 3200 Mbps (DDR4-3200)
Supply Voltage (VDD) — 1.2 V
Packaging — Tray
Product Status — Active
Manufacturer — SK Hynix
Technology — CMOS DDR4 SDRAM
工作温度 — [DATA_NEEDED: operating temperature range]
Refresh — [DATA_NEEDED: refresh rate]

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