MT40A2G8AG-062E vs MT40A1G8AG-062E 对比

详细并排对比 MT40A2G8AG-062E 出自 Micron Technology 和 MT40A1G8AG-062E 出自 Micron Technology。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Micron Technology
MT40A2G8AG-062E MT40A2G8AG-062E - 16Gb DDR4 SDRAM 2Gx8 3200Mbps | Micron

MT40A2G8AG-062E - 16Gb DDR4 SDRAM 2Gx8 3200Mbps | Micron

MT40A2G8AG-062E ✓ 量产中
Micron Technology
MT40A1G8AG-062E MT40A1G8AG-062E - 8Gb DDR4 SDRAM 3200Mb/s x8 | Micron

MT40A1G8AG-062E - 8Gb DDR4 SDRAM 3200Mb/s x8 | Micron

MT40A1G8AG-062E ✓ 量产中

规格对比

参数 MT40A2G8AG-062E MT40A1G8AG-062E
品牌 Micron Technology Micron Technology
分类 Memory ICs Memory ICs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $9.75 $3.10
存储器类型 DDR4 SDRAM DDR4 SDRAM
Density 16 Gbit —
存储组织 2G x 8 1G x 8
Speed DDR4-3200 (3200 MT/s) —
Clock Frequency 1600 MHz 1.6 GHz (DDR4-3200, 3200 MT/s data rate)
Access Time (Clock Cycle Time) 0.625 ns (tCK) —
CAS 延迟 CL22 (DDR4-3200) —
Access Time 19 ns —
Supply Voltage VDD 1.2 V —
I/O Interface POD12 (1.2 V pseudo-open drain) —
VPP Voltage 2.5 V —
Number of Banks 16 (4 bank groups x 4 banks) —
Operating Temperature (AUT grade) -40C to +95C (per Micron grade table) —
封装 78-FBGA (7.5 x 11 mm) 78-FBGA (7.5 x 11 mm)
安装类型 Surface Mount Surface Mount (BGA)
RoHS 状态 Compliant [DATA_NEEDED: RoHS status]
Die Revision AG (current generation) —
存储容量 — 8 Gbit
接口 — Parallel
Clock Cycle Time — 19 ns class (-062E speed grade)
Supply Voltage (VDD) — 1.2 V
Temperature Grade — Automotive (AUT)
Access Time (CAS Latency class) — DDR4-3200 timing class (tAA per datasheet)
Bank Group Architecture — Yes (DDR4 bank groups)
Termination — On-Die Termination (ODT)
CA Parity — Supported (DDR4 command/address parity)
Packaging Option — Tape and Reel (TR / :R suffix)
工作温度范围 — [DATA_NEEDED: operating temperature range]
Refresh Rate — [DATA_NEEDED: refresh rate]

数据手册与资源

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