MT40A512M16AD-062E vs MT40A512M16TB-062E:R 对比
详细并排对比 MT40A512M16AD-062E 出自 Micron Technology 和 MT40A512M16TB-062E:R 出自 Micron Technology。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
Micron Technology
MT40A512M16AD-062E - 8Gbit DDR4 SDRAM x16 3200MT/s | Micron
MT40A512M16AD-062E ✓ 量产中Micron Technology
MT40A512M16TB-062E:R - 8Gb DDR4 SDRAM 3200MT/s | Micron
MT40A512M16TB-062E:R ✓ 量产中规格对比
| 参数 | MT40A512M16AD-062E | MT40A512M16TB-062E:R |
|---|---|---|
| 品牌 | Micron Technology | Micron Technology |
| 分类 | Memory ICs | Memory ICs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $9.20 | $60.00 |
| 存储器类型 | DDR4 SDRAM | DDR4 SDRAM |
| 存储容量 | 8 Gbit | 8 Gbit (512M x 16) |
| 存储组织 | 512M x 16 | — |
| Clock Frequency | 1.6 GHz | 1600 MHz |
| Access Time (Row Cycle) | 19 ns | — |
| 接口 | Parallel (POD) | Parallel |
| 封装 | 96-FBGA (7.5 mm x 13.5 mm) | 96-FBGA (7.5x13 mm) |
| 安装类型 | Surface Mount | — |
| Automotive Qualification | AUT:E (automotive variant) | — |
| Speed Grade | -062E | — |
| 电源电压 | [DATA_NEEDED: core supply voltage (VDD)] | — |
| 工作温度 | [DATA_NEEDED: operating temperature range] | 0°C to +95°C |
| Prefetch Architecture | 8n with bank groups | — |
| HS Code (USHTS) | 8542320071 | — |
| RoHS 状态 | [DATA_NEEDED: RoHS status] | Compliant |
| Standard Pack Quantity | [DATA_NEEDED: reel quantity] | — |
| 数据速率 | — | 3200 MT/s |
| CAS 延迟 | — | 22 |
| Supply Voltage (VDD/VDDQ) | — | 1.2V ±60mV |
| VPP Voltage | — | 2.5V (-125mV, +250mV) |
| 数据总线宽度 | — | 16 bits |
| Refresh Time | — | 8192 cycles (64ms at -40°C to 85°C, 32ms at >85°C to 95°C, 16ms at >95°C) |
| I/O Type | — | 1.2V pseudo open-drain |
| 特性 | — | Auto self-refresh, auto precharge, write leveling, CRC, dynamic on-chip termination, ZQ calibration |