MT40A512M16HA-083E - 8Gb DDR4-2400 SDRAM | Micron
料号： MT40A512M16HA-083E ✓ 量产中| 数量 | 单价 | 小计 |
|---|---|---|
| 1 | $0 | $0.00 |
| 10 | $0 | $0.00 |
| 100 | $0 | $0.00 |
| 500 | $0 | $0.00 |
| 1,000 | $0 | $0.00 |
MT40A512M16HA-083E 概述
DDR4 SDRAM, or Double Data Rate 4 Synchronous Dynamic Random-Access Memory, is volatile memory that transfers data on both edges of the clock. It belongs to the SDRAM and DRAM hierarchies and operates from a lower core voltage than DDR3 while supporting higher data throughput. DDR4 memory is widely used in servers, networking equipment, data storage systems, and industrial computing platforms.
The MT40A512M16HA-083E provides an 8Gbit density with a 16-bit parallel data bus. Its 1.2V VDD and VDDQ supply, 2.5V VPP supply, 1.2V pseudo open-drain I/O interface, and internal adjustable VREFDQ generation support modern DDR4 signal-integrity requirements. Micron specifies a 1.2V supply tolerance of plus or minus 60mV and VPP tolerances from -125mV to +250mV.
Refresh timing is temperature dependent. The device uses an 8192-cycle refresh interval, with stated refresh times of 64 ms from -40 degrees C to 85 degrees C, 32 ms above 85 degrees C to 95 degrees C, and 16 ms above 95 degrees C. The 96-ball FBGA uses a 0.8 mm ball pitch and is intended for surface-mount assembly.
Typical applications include high-performance servers, routers, switches, storage systems, and industrial platforms. The x16 organization enables practical memory-controller configurations where wider logical channels can be built from multiple devices.
PCB implementation should follow Micron's DDR4 layout guidance, including controlled-impedance routing, careful fly-by topology, and placement of decoupling and command/address termination networks close to the memory device. A stable, low-noise 1.2V rail and a compliant 2.5V VPP supply are essential.
This page combines manufacturer specifications, distributor references, replacement analysis, and practical DDR4 design guidance to support component selection and board-level implementation.
直接替换替代料： MT40A512M16HA-083E ——相同封装，引脚兼容。需要 PCB 改动的不同封装料号已排除。
本系列中的变体
可与以下型号直接替换的同系列型号： MT40A512M16HA-083E （相同外形与封装尺寸） ——差异在于 Data Rate, Package, Clock Frequency, Features, Memory Type.
快速对比工具——选择替代料号进行并排对比：
MT40A512M16JY-083E
✅ 直接替换✓ 有现货
$5.85 / 个
查看数据手册 →MT40A512M16LY-062E
✅ 直接替换✓ 有现货
$6.65 / 个
查看数据手册 →MT40A512M16LY-075E
✅ 直接替换📋 参考替代料（不在目录中）
MT40A512M16JY-075E
✅ 直接替换✓ 有现货
$30.5 / 个
查看数据手册 →MT40A512M16TB-062E
✅ 直接替换✓ 有现货
$60 / 个
查看数据手册 →HGD48G16M26
✅ 直接替换📋 参考替代料（不在目录中）
MT40A512M16HA-083E 最大额定值与电气特性
| 存储器类型 | DDR4 SDRAM |
| Memory Density | 8Gbit |
| Memory Organization | 512M x 16 |
| Data Interface | Parallel DDR4, 16-bit |
| 数据速率 | 1.2 GHz data clock; DDR4-2400 class |
| VDD Supply | 1.2 V plus or minus 60 mV |
| VDDQ Supply | 1.2 V plus or minus 60 mV |
| VPP Supply | 2.5 V, -125 mV to +250 mV |
| I/O Interface | 1.2V pseudo open-drain |
| 基准电压 | On-die internal adjustable VREFDQ |
| Refresh Cycle Count | 8192 cycles |
| Refresh Time, -40C to 85C | 64 ms |
| Refresh Time, >85C to 95C | 32 ms |
| Refresh Time, >95C | 16 ms |
| 封装 | 96-ball FBGA, 9 x 14 mm |
| Ball Pitch | 0.8 mm |
| 安装类型 | Surface Mount |
| RoHS 状态 | Compliant |
MT40A512M16HA-083E 96-ball fbga, 9 x 14 mm 引脚配置指南
MT40A512M16HA-083E（96-ball fbga, 9 x 14 mm 封装）的引脚配置。 该数字 IC 包含 GPIO、通信接口（UART、SPI、I2C）和电源引脚。请参阅制造商数据手册以了解复用引脚功能和配置选项。对嵌入式系统设计和 PCB 布局至关重要。
暂无详细引脚数据： MT40A512M16HA-083E.
请参阅 数据手册 以查看完整引脚配置。
典型应用
MT40A512M16HA-083E 适用于 6 应用s: High-Performance Server Memory, Networking Equipment, Industrial Computing Platforms, Data Storage Systems, Telecommunications Equipment, Embedded Control Systems.
High-Performance Server Memory
The MT40A512M16HA-083E is suitable for server memory channels that require an 8Gbit DDR4 device with a 512M x 16 organization and up to DDR4-2400-class signaling. Its 1.2V core and I/O supply lowers the power burden compared with older memory technologies while providing sufficient bandwidth for processor and accelerator traffic. A controller with compatible x16 DDR4 support can use the device in server DIMM or module designs when thermal and signal-integrity requirements are met. The board must follow Micron's recommended topology, decoupling, VPP generation, and controlled-impedance routing.
推荐
Networking Equipment
The MT40A512M16HA-083E can support packet-processing and switching platforms that need deterministic DDR4 bandwidth in a compact 96-ball FBGA package. Its 512M x 16 organization allows memory designers to construct wider channels from multiple devices, while the 1.2V pseudo open-drain interface and internal VREFDQ generation support DDR4 signal integrity. In routers and switches, placement near the memory controller, careful fly-by routing, and clean 1.2V and 2.5V supplies are essential. Exact controller and thermal requirements must be verified for each platform.
推荐
Industrial Computing Platforms
The MT40A512M16HA-083E is appropriate for industrial controllers and embedded systems that need local DDR4 memory for buffering, networking, or compute workloads. Its 8Gbit density and 16-bit organization provide a practical balance of capacity, bandwidth, and package size for control cabinets, machine vision, and industrial gateways. Temperature-grade qualification, refresh timing, and controller support must match the enclosure environment. Since the supplied data does not state the complete operating-temperature range, engineers should confirm the exact ordering option before production release.
推荐
Data Storage Systems
The MT40A512M16HA-083E can serve as working memory in storage controllers, caching systems, and embedded storage platforms where sustained DDR4 throughput is needed. Its 512M x 16 organization can simplify the construction of memory channels that support storage controllers, while 1.2V operation helps constrain power in compact systems. Storage designs should account for refresh behavior, controller training support, VPP supply quality, and the thermal environment around the FBGA. Validate the exact Micron ordering suffix and memory-controller compatibility during design-in.
推荐
Telecommunications Equipment
The MT40A512M16HA-083E is suitable for telecommunications infrastructure requiring DDR4 memory in baseband, control, or network-processing subsystems. The 8Gbit density supports buffering and protocol workloads, while the 96-ball FBGA package facilitates compact board layouts. Telecommunications equipment commonly requires strict supply-noise, signal-integrity, and long-term availability controls, so the memory controller, power regulators, and thermal design should be qualified together. Verify temperature, endurance, and lifecycle requirements against the exact product documentation.
推荐
Embedded Control Systems
The MT40A512M16HA-083E can support embedded processors, FPGAs, and industrial SoCs that need external DDR4 memory for working data, graphics buffers, or network queues. Its 16-bit organization is well suited to memory controllers designed for wider DDR channels, and the 1.2V supply reduces system power compared with legacy memory technologies. The design must account for package ballout, routing topology, VPP generation, refresh configuration, and thermal rise. Use the exact Micron datasheet and controller support list to confirm electrical and timing compatibility.
推荐
推荐产品汇总
工程参考数据： MT40A512M16HA-083E ——对比、设计指导和合规信息。
选型指南
与替代料对比
| 参数 | 本产品 | MT40A512M16JY-083E | MT40A512M16LY-062E | HGD48G16M26 |
|---|---|---|---|---|
| Brand | Micron Technology | Micron Technology | Micron Technology | HGCHIPS |
| Package | 96-ball FBGA (9x14 mm) | 96-pin FBGA | 96-ball FBGA family | 96-ball FBGA, supplier confirmation required |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM | DDR4 SDRAM | DDR4 SDRAM |
| Memory Density | 8Gbit | 8Gbit | 8Gbit | 8Gbit |
| Memory Organization | 512M x 16 | 512M x 16 | 512M x 16 | Supplier states matching organization |
关键差异点
- Verified 512M x 16 organization （对比 MT40A512M16JY-083E)
- Documented 1.2V pseudo open-drain interface and internal VREFDQ （对比 HGD48G16M26)
- Temperature-dependent refresh information （对比 MT40A512M16LY-062E)
设计说明
Route DDR4 command, address, control, and data signals using the topology and impedance requirements in Micron's DDR4 design guidance. The 1.2V pseudo open-drain interface depends on correct return paths, termination networks, and clean references. Avoid long stubs and unnecessary layer transitions, and place fly-by routing components according to the memory-controller requirements.
Provide stable VDD/VDDQ at 1.2V plus or minus 60mV and VPP at 2.5V within the stated -125mV to +250mV tolerance. Use low-noise regulators and place decoupling capacitance close to the memory power balls. Validate ripple and transient response at the device pins rather than relying only on measurements at the power supply.
The 96-ball FBGA requires adequate board copper and, where necessary, thermal vias to spread heat from the memory device. Check junction-temperature limits against the actual ambient temperature, memory activity, airflow, and nearby power components. The supplied data does not provide a complete thermal resistance or operating-temperature specification, so use the exact Micron documentation for final thermal calculations.
合规信息
RoHS compliance is stated in the supplied Micron information. REACH, lead-free, halogen-free, and conflict-minerals declarations were not provided and remain unknown.
