MT40A512M16JY-083E vs MT40A512M16HA-083E 对比

详细并排对比 MT40A512M16JY-083E 出自 Micron Technology 和 MT40A512M16HA-083E 出自 Micron Technology。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Micron Technology
MT40A512M16JY-083E MT40A512M16JY-083E - 8Gb DDR4 SDRAM 2400MT/s x16 | Micron

MT40A512M16JY-083E - 8Gb DDR4 SDRAM 2400MT/s x16 | Micron

MT40A512M16JY-083E ✓ 量产中
Micron Technology
MT40A512M16HA-083E MT40A512M16HA-083E - 8Gb DDR4-2400 SDRAM | Micron

MT40A512M16HA-083E - 8Gb DDR4-2400 SDRAM | Micron

MT40A512M16HA-083E ✓ 量产中

规格对比

参数 MT40A512M16JY-083E MT40A512M16HA-083E
品牌 Micron Technology Micron Technology
分类 DRAM Memory ICs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $5.85 $0.00
存储器类型 DDR4 SDRAM (Automotive) DDR4 SDRAM
Density 8 Gbit —
存储组织 512M x 16 —
Clock Frequency 1.2 GHz (tCK = 0.83 ns) —
数据速率 2400 MT/s (speed grade -083E) 1.2 GHz data clock; DDR4-2400 class
VDD Supply Voltage 1.2 V +/- 60 mV —
VDDQ Supply Voltage 1.2 V +/- 60 mV —
VPP Supply Voltage 2.5 V, -125 mV, +250 mV —
I/O Interface 1.2 V pseudo open-drain 1.2V pseudo open-drain
VREFDQ On-die internal adjustable generation —
Refresh Structure 8192-cycle refresh —
Refresh Window 64 ms at -40C to 85C; 32 ms at >85C to 95C; 16 ms at >95C —
封装 96-FBGA (8 x 14 mm) 96-ball FBGA, 9 x 14 mm
安装类型 Surface Mount Surface Mount
ECCN EAR99 —
无卤 Compliant —
Country of Origin China —
Memory Density — 8Gbit
Memory Organization — 512M x 16
Data Interface — Parallel DDR4, 16-bit
VDD Supply — 1.2 V plus or minus 60 mV
VDDQ Supply — 1.2 V plus or minus 60 mV
VPP Supply — 2.5 V, -125 mV to +250 mV
基准电压 — On-die internal adjustable VREFDQ
Refresh Cycle Count — 8192 cycles
Refresh Time, -40C to 85C — 64 ms
Refresh Time, >85C to 95C — 32 ms
Refresh Time, >95C — 16 ms
Ball Pitch — 0.8 mm
工作温度 — [DATA_NEEDED: operating temperature range]
RoHS 状态 — Compliant

数据手册与资源

浏览全部产品 创建 BOM 获取报价