MT40A512M16TB-062E:R vs MT40A512M16AD-062E 对比

详细并排对比 MT40A512M16TB-062E:R 出自 Micron Technology 和 MT40A512M16AD-062E 出自 Micron Technology。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Micron Technology
MT40A512M16TB-062E:R MT40A512M16TB-062E:R - 8Gb DDR4 SDRAM 3200MT/s | Micron

MT40A512M16TB-062E:R - 8Gb DDR4 SDRAM 3200MT/s | Micron

MT40A512M16TB-062E:R ✓ 量产中
Micron Technology
MT40A512M16AD-062E MT40A512M16AD-062E - 8Gbit DDR4 SDRAM x16 3200MT/s | Micron

MT40A512M16AD-062E - 8Gbit DDR4 SDRAM x16 3200MT/s | Micron

MT40A512M16AD-062E ✓ 量产中

规格对比

参数 MT40A512M16TB-062E:R MT40A512M16AD-062E
品牌 Micron Technology Micron Technology
分类 Memory ICs Memory ICs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $60.00 $9.20
存储器类型 DDR4 SDRAM DDR4 SDRAM
存储容量 8 Gbit (512M x 16) 8 Gbit
数据速率 3200 MT/s —
Clock Frequency 1600 MHz 1.6 GHz
CAS 延迟 22 —
Supply Voltage (VDD/VDDQ) 1.2V ±60mV —
VPP Voltage 2.5V (-125mV, +250mV) —
工作温度 0°C to +95°C [DATA_NEEDED: operating temperature range]
封装 96-FBGA (7.5x13 mm) 96-FBGA (7.5 mm x 13.5 mm)
接口 Parallel Parallel (POD)
数据总线宽度 16 bits —
Refresh Time 8192 cycles (64ms at -40°C to 85°C, 32ms at >85°C to 95°C, 16ms at >95°C) —
I/O Type 1.2V pseudo open-drain —
特性 Auto self-refresh, auto precharge, write leveling, CRC, dynamic on-chip termination, ZQ calibration —
RoHS 状态 Compliant [DATA_NEEDED: RoHS status]
存储组织 — 512M x 16
Access Time (Row Cycle) — 19 ns
安装类型 — Surface Mount
Automotive Qualification — AUT:E (automotive variant)
Speed Grade — -062E
电源电压 — [DATA_NEEDED: core supply voltage (VDD)]
Prefetch Architecture — 8n with bank groups
HS Code (USHTS) — 8542320071
Standard Pack Quantity — [DATA_NEEDED: reel quantity]

数据手册与资源

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