MT40A512M16TB-062E vs MT40A512M16HA-083E 对比
详细并排对比 MT40A512M16TB-062E 出自 Micron Technology 和 MT40A512M16HA-083E 出自 Micron Technology。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | MT40A512M16TB-062E | MT40A512M16HA-083E |
|---|---|---|
| 品牌 | Micron Technology | Micron Technology |
| 分类 | Memory ICs | Memory ICs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $60.00 | $0.00 |
| 存储器类型 | DDR4 SDRAM | DDR4 SDRAM |
| 存储容量 | 8 Gbit | — |
| 存储组织 | 512M x 16 | — |
| 数据速率 | 1600 MHz (DDR4-3200) | 1.2 GHz data clock; DDR4-2400 class |
| Supply Voltage - VDD/VDDQ | 1.2V ±60mV | — |
| Supply Voltage - VPP | 2.5V, -125mV, +250mV | — |
| tRCD | 19 ns | — |
| Refresh Time | 8192 cycles; 64ms at -40°C to 85°C, 32ms at >85°C to 95°C, 16ms at >95°C | — |
| 工作温度范围 | 0°C to +95°C (standard), -40°C to +95°C (IT) | — |
| 封装 | 96-FBGA (7.5x13 mm) | 96-ball FBGA, 9 x 14 mm |
| 安装类型 | Surface Mount | Surface Mount |
| 接口 | Parallel | — |
| 特性 | Auto self-refresh, auto precharge, write leveling, CRC, dynamic on-chip termination, ZQ calibration | — |
| RoHS 状态 | Compliant | Compliant |
| REACH Status | Compliant | — |
| Memory Density | — | 8Gbit |
| Memory Organization | — | 512M x 16 |
| Data Interface | — | Parallel DDR4, 16-bit |
| VDD Supply | — | 1.2 V plus or minus 60 mV |
| VDDQ Supply | — | 1.2 V plus or minus 60 mV |
| VPP Supply | — | 2.5 V, -125 mV to +250 mV |
| I/O Interface | — | 1.2V pseudo open-drain |
| 基准电压 | — | On-die internal adjustable VREFDQ |
| Refresh Cycle Count | — | 8192 cycles |
| Refresh Time, -40C to 85C | — | 64 ms |
| Refresh Time, >85C to 95C | — | 32 ms |
| Refresh Time, >95C | — | 16 ms |
| Ball Pitch | — | 0.8 mm |
| 工作温度 | — | [DATA_NEEDED: operating temperature range] |