MT40A512M8RH-083E vs MT40A512M8RH-075E:B 对比

详细并排对比 MT40A512M8RH-083E 出自 Micron Technology 和 MT40A512M8RH-075E:B 出自 Micron Technology。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Micron Technology
MT40A512M8RH-083E MT40A512M8RH-083E - 4Gb DDR4 512Mx8 2400MHz | Micron

MT40A512M8RH-083E - 4Gb DDR4 512Mx8 2400MHz | Micron

MT40A512M8RH-083E ✓ 量产中
Micron Technology
MT40A512M8RH-075E:B MT40A512M8RH-075E:B - DDR4 4Gb 2666 MT/s SDRAM | Micron

MT40A512M8RH-075E:B - DDR4 4Gb 2666 MT/s SDRAM | Micron

MT40A512M8RH-075E:B ✓ 量产中

规格对比

参数 MT40A512M8RH-083E MT40A512M8RH-075E:B
品牌 Micron Technology Micron Technology
分类 Memory ICs Memory ICs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $3.30 $2.15
存储器类型 DDR4 SDRAM DDR4 SDRAM
Density 4 Gbit 4 Gbit
存储组织 512M x 8 512M x 8
Industry Speed Grade DDR4-2400 —
Clock Rate 1.2 GHz —
Internal Banks 8 banks (2 groups of 4) —
Prefetch 8n-bit —
Refresh 64 ms, 8192-cycle refresh (to 95C) Refresh max interval extension at extended TC temperature range (125C capable per family features)
VDD / VDDQ 1.2 V +/-60 mV —
VPP 2.5 V, -125 mV/+250 mV —
I/O Structure 1.2 V pseudo open-drain 1.2V pseudo open-drain
VREFDQ On-die internal, adjustable generation —
工作温度 0C to +95C [DATA_NEEDED: operating temperature range (standard grade)]
封装 78-ball FBGA (9 x 10.5 mm) 78-FBGA (9 x 10.5 mm), TFBGA
FBGA Code D9TGG —
Marking Code D9TGG —
Data Strobe Preamble Programmable —
RoHS 状态 Compliant [DATA_NEEDED: RoHS status]
CAS 延迟 [DATA_NEEDED: CAS latency per speed bin table] —
数据速率 — 2666 MT/s (DDR4-2666)
Clock Frequency — 1333 MHz (1.33 GHz)
VDD Supply Voltage — 1.2 V +/-60 mV
VDDQ Supply Voltage — 1.2 V +/-60 mV
VPP Supply Voltage — 2.5 V, -125 mV/+250 mV
接口类型 — Parallel
基准电压 — On-die internal adjustable VREFDQ generation
安装类型 — Surface Mount
Speed Grade Suffix — -075E
Packaging Option Suffix — :B (ball map B designation per Mouser listing)

数据手册与资源

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