MT41K256M16HA-125 vs H5TC4G63CFR-H9J 对比

详细并排对比 MT41K256M16HA-125 出自 Micron Technology 和 H5TC4G63CFR-H9J 出自 SK hynix。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Micron Technology
MT41K256M16HA-125 MT41K256M16HA-125 - 4Gbit DDR3L SDRAM 800MHz | Micron

MT41K256M16HA-125 - 4Gbit DDR3L SDRAM 800MHz | Micron

MT41K256M16HA-125 ✓ 量产中
SK hynix
H5TC4G63CFR-H9J H5TC4G63CFR-H9J - 4Gb DDR3L SDRAM 96-Ball TFBGA | SK Hynix

H5TC4G63CFR-H9J - 4Gb DDR3L SDRAM 96-Ball TFBGA | SK Hynix

H5TC4G63CFR-H9J ✓ 量产中

规格对比

参数 MT41K256M16HA-125 H5TC4G63CFR-H9J
品牌 Micron Technology SK hynix
分类 Memory ICs Memory ICs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $6.36 $6.00
存储器类型 SDRAM - DDR3L DDR3L SDRAM
存储容量 4Gbit (256M x 16) —
数据总线宽度 16 bit —
Clock Frequency 800 MHz —
Access Time 13.75 ns —
电源电压 1.35 V —
封装 96-FBGA (9x14 mm) 96-ball TFBGA
引脚数 96 —
安装类型 Surface Mount —
工作温度 [DATA_NEEDED: operating temperature range] —
RoHS 状态 Compliant —
Lead-Free Yes Yes
Logic Family CMOS —
Refresh Interval 7.8 us at 85C —
CAS 延迟 11 —
Density — 4Gb
存储组织 — 256M x 16
Supply Voltage (VDD/VDDQ) — 1.35V +0.100/-0.067V
Speed Grade — -H9 (1866 Mbps / PC3-14900)
Number of Terminals — 96
Temperature Grade — Industrial
无卤 — Yes
RoHS Compliant — Yes
Clock Input — Fully differential (CK, CK)
Data Strobe — Differential (DQS, DQS)
On-Chip DLL — Yes
Data Mask (DM) — Yes

数据手册与资源

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