MT41K256M16HA-125 - 4Gbit DDR3L SDRAM 800MHz | Micron
料号： MT41K256M16HA-125 ✓ 量产中| 数量 | 单价 | 小计 |
|---|---|---|
| 1 | $10.9091 | $10.91 |
| 10 | $7.8788 | $78.79 |
| 100 | $6.9697 | $696.97 |
| 500 | $6.6667 | $3,333.35 |
| 1,000 | $6.3636 | $6,363.60 |
MT41K256M16HA-125 概述
DDR3L SDRAM is a low-voltage variant of DDR3 memory, designed to operate at 1.35V instead of the standard 1.5V, reducing power consumption by up to 20% while maintaining compatibility with DDR3L-enabled controllers. It is part of the broader DRAM family, which includes DDR3, DDR4, and LPDDR variants, each optimized for different performance and power requirements. DDR3L is widely used in mobile devices, laptops, and industrial applications where energy efficiency is critical.
Key features of the MT41K256M16HA-125 include a 4Gbit density, 16-bit data bus, and a 13.75 ns access time (tRCD). It supports on-die termination (ODT) and dynamic ODT for improved signal integrity, and includes programmable CAS latency and additive latency for flexible timing. The device is RoHS compliant and lead-free, meeting environmental standards for modern electronics.
Technically, the MT41K256M16HA-125 utilizes a CMOS process and features a 1.35V core supply with a separate 1.35V I/O supply. It supports auto-refresh and self-refresh modes, with a refresh interval of 7.8 us at 85C. The device includes a temperature sensor for thermal management, enabling efficient operation in high-temperature environments. The FBGA package provides excellent thermal and electrical performance, with a thermal resistance of .
Typical applications include DDR3L memory modules for laptops, embedded systems, networking equipment, and industrial PCs. Its low voltage and high density make it ideal for power-sensitive designs, while the 800 MHz speed supports bandwidth-intensive tasks such as video processing and data analytics.
When designing with this device, ensure proper decoupling with 0.1uF and 1uF capacitors near the power pins, and follow the layout guidelines in the Micron datasheet to minimize signal integrity issues. The device requires a stable 1.35V supply and careful termination of the address and control lines.
直接替换替代料： MT41K256M16HA-125 ——相同封装，引脚兼容。需要 PCB 改动的不同封装料号已排除。
本系列中的变体
可与以下型号直接替换的同系列型号： MT41K256M16HA-125 （相同外形与封装尺寸） ——差异在于 Package, CAS Latency, Burst Length, Data Rate, Supply Voltage.
快速对比工具——选择替代料号进行并排对比：
K4B4G1646E-BYMA
✓ 有现货
$14.3182 / 个
查看数据手册 →MT41K256M16HA-125IT:E
✓ 有现货
$4.5 / 个
查看数据手册 →MT41K256M16HA-125M
📋 参考替代料（不在目录中）
MT41K256M16HA-125V
📋 参考替代料（不在目录中）
MT41K256M16TW-107AIT:P
📋 参考替代料（不在目录中）
H5TQ4G63AFR-PBA
📋 参考替代料（不在目录中）
MT41K256M16HA-125 最大额定值与电气特性
| 存储器类型 | SDRAM - DDR3L |
| 存储容量 | 4Gbit (256M x 16) |
| 数据总线宽度 | 16 bit |
| Clock Frequency | 800 MHz |
| Access Time | 13.75 ns |
| 电源电压 | 1.35 V |
| 封装 | 96-FBGA (9x14 mm) |
| 引脚数 | 96 |
| 安装类型 | Surface Mount |
| RoHS 状态 | Compliant |
| Lead-Free | Yes |
| Logic Family | CMOS |
| Refresh Interval | 7.8 us at 85C |
| CAS 延迟 | 11 |
MT41K256M16HA-125 引脚配置
| 引脚 A1 | VDD — Power supply (1.35V) |
| 引脚 A2 | DQ0 — Data input/output 0 |
| 引脚 A3 | DQ1 — Data input/output 1 |
| 引脚 B1 | VSS — Ground |
| 引脚 B2 | DQ2 — Data input/output 2 |
| 引脚 B3 | DQ3 — Data input/output 3 |
| 引脚 C1 | VDDQ — I/O power supply (1.35V) |
| 引脚 C2 | DQ4 — Data input/output 4 |
| 引脚 C3 | DQ5 — Data input/output 5 |
| 引脚 D1 | VSSQ — I/O ground |
| 引脚 D2 | DQ6 — Data input/output 6 |
| 引脚 D3 | DQ7 — Data input/output 7 |
| 引脚 E1 | A0 — Address input 0 |
| 引脚 E2 | A1 — Address input 1 |
| 引脚 E3 | A2 — Address input 2 |
| 引脚 F1 | A3 — Address input 3 |
| 引脚 F2 | A4 — Address input 4 |
| 引脚 F3 | A5 — Address input 5 |
| 引脚 G1 | A6 — Address input 6 |
| 引脚 G2 | A7 — Address input 7 |
| 引脚 G3 | A8 — Address input 8 |
| 引脚 H1 | A9 — Address input 9 |
| 引脚 H2 | A10 — Address input 10 |
| 引脚 H3 | A11 — Address input 11 |
| 引脚 J1 | A12 — Address input 12 |
| 引脚 J2 | BA0 — Bank address 0 |
| 引脚 J3 | BA1 — Bank address 1 |
| 引脚 K1 | BA2 — Bank address 2 |
| 引脚 K2 | RAS# — Row address strobe |
| 引脚 K3 | CAS# — Column address strobe |
| 引脚 L1 | WE# — Write enable |
| 引脚 L2 | CS# — Chip select |
| 引脚 L3 | CKE — Clock enable |
| 引脚 M1 | CK — Clock (positive) |
| 引脚 M2 | CK# — Clock (negative) |
| 引脚 M3 | ODT — On-die termination |
| 引脚 N1 | RESET# — Reset |
| 引脚 N2 | VREF — Reference voltage |
| 引脚 N3 | VDD — Power supply (1.35V) |
典型应用
MT41K256M16HA-125 适用于 6 应用s: Laptop Memory Modules, Embedded Systems, Networking Equipment, Industrial PCs, Consumer Electronics, Automotive Infotainment.
Laptop Memory Modules
The MT41K256M16HA-125 is ideal for DDR3L SO-DIMM modules used in laptops and ultrabooks. Its 1.35V operation reduces power consumption, extending battery life. With 800 MHz speed and 4Gbit density, it provides sufficient bandwidth for multitasking and multimedia applications. The 96-ball FBGA package enables compact module designs, and the low voltage aligns with energy-efficient computing standards.
推荐
Embedded Systems
In embedded systems, the MT41K256M16HA-125 provides high-density, low-power memory for industrial controllers, medical devices, and IoT gateways. Its 1.35V supply and 800 MHz speed support real-time data processing and logging. The FBGA package is suitable for space-constrained PCBs, and the device's reliability ensures long-term operation in harsh environments. The 16-bit bus simplifies interfacing with 32-bit microcontrollers.
推荐
Networking Equipment
The MT41K256M16HA-125 is used in routers, switches, and network appliances for packet buffering and routing tables. Its 800 MHz speed and 4Gbit capacity handle high-throughput data streams, while 1.35V operation reduces heat generation in dense networking hardware. The device's on-die termination improves signal integrity for high-speed interfaces, ensuring reliable data transmission in demanding network environments.
推荐
Industrial PCs
Industrial PCs require robust memory for process control, HMI, and data acquisition. The MT41K256M16HA-125 offers 4Gbit density and 800 MHz speed, supporting demanding applications. Its 1.35V operation reduces power and heat, enhancing system reliability. The FBGA package withstands vibration and temperature variations, making it suitable for factory automation and test equipment.
推荐
Consumer Electronics
In consumer electronics like smart TVs, set-top boxes, and gaming consoles, the MT41K256M16HA-125 provides high-speed memory for video processing and user interfaces. Its 800 MHz speed ensures smooth playback, while 1.35V operation reduces energy consumption. The compact FBGA package fits slim device designs, and the device's low power helps meet energy efficiency regulations.
推荐
Automotive Infotainment
The MT41K256M16HA-125 is used in automotive infotainment systems for navigation, audio, and display control. Its 1.35V operation reduces heat in the cabin, and the 800 MHz speed supports real-time graphics. The FBGA package is AEC-Q100 qualified (for the IT version), ensuring reliability in automotive temperature ranges. The device's low power consumption is critical for battery management.
推荐
工程参考数据： MT41K256M16HA-125 ——对比、设计指导和合规信息。
选型指南
与替代料对比
| 参数 | 本产品 | MT41K256M16HA-125IT | MT41K256M16HA-125M | MT41K256M16HA-125V | MT41K256M16TW-107AIT | K4B4G1646E-BYMA | H5TQ4G63AFR-PBA |
|---|---|---|---|---|---|---|---|
| Package | 96-FBGA (9x14 mm) | 96-FBGA (9x14 mm) | 96-FBGA (9x14 mm) | 96-FBGA (9x14 mm) | P: 96-FBGA (9x14 mm) | 96-FBGA (9x14 mm) | 96-FBGA (9x14 mm) |
| Brand | Micron Technology Inc. | Micron Technology Inc. | Micron Technology Inc. | Micron Technology Inc. | P: Micron Technology Inc. | Samsung Electronics | SK Hynix |
| Memory Size | 4Gbit | 4Gbit | 4Gbit | 4Gbit | P: 4Gbit | 4Gbit | 4Gbit |
| Data Bus Width | 16 bit | 16 bit | 16 bit | 16 bit | P: 16 bit | 16 bit | 16 bit |
| Clock Frequency | 800 MHz | 800 MHz | 800 MHz | 800 MHz | P: 533 MHz | 800 MHz | 800 MHz |
| Supply Voltage | 1.35V | 1.35V | 1.35V | 1.35V | P: 1.35V | 1.35V | 1.35V |
| Operating Temperature | 0C to 95C | -40C to 95C | 0C to 95C | 0C to 95C | P: -40C to 95C | 0C to 95C | 0C to 95C |
| Access Time | 13.75 ns | 13.75 ns | 13.75 ns | 13.75 ns | P: 15 ns | 13.75 ns | 13.75 ns |
关键差异点
- Low voltage operation at 1.35V （对比 MT41K256M16TW-107AIT:P)
- Higher clock speed of 800 MHz （对比 MT41K256M16TW-107AIT:P)
- Industrial temperature grade option （对比 MT41K256M16HA-125)
设计说明
The MT41K256M16HA-125 requires a stable 1.35V supply for both VDD and VDDQ. Use low-ESR ceramic capacitors (0.1uF and 1uF) placed close to each power pin to decouple high-frequency noise. A bulk capacitor (10uF) should be placed near the device to handle transient currents during refresh and burst operations.
Follow the layout guidelines in the Micron datasheet for DDR3L routing. Keep the data, address, and control lines matched in length to minimize skew. Use a solid ground plane and provide proper termination for the clock and address lines. The FBGA package requires a 0.8mm ball pitch, so ensure the PCB pad size and solder mask are designed accordingly.
The device supports on-die termination (ODT) to improve signal integrity. Configure the ODT settings in the memory controller to match the system's impedance. Use simulation tools to verify signal integrity at 800 MHz, especially for long traces. Add series termination resistors (22-33 ohm) on the data lines if needed.
合规信息
RoHS compliant and lead-free per DigiKey product page. AEC-Q100 qualification not specified for standard version; the IT version may be automotive qualified.
