MT41K256M16TG-125 vs K4B4G1646E-BYMA 对比
详细并排对比 MT41K256M16TG-125 出自 Micron Technology 和 K4B4G1646E-BYMA 出自 Samsung Electronics。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | MT41K256M16TG-125 | K4B4G1646E-BYMA |
|---|---|---|
| 品牌 | Micron Technology | Samsung Electronics |
| 分类 | Memory ICs | Memory ICs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $7.20 | $14.32 |
| 存储器类型 | DDR3L SDRAM | DDR3L SDRAM |
| 存储容量 | 4 Gbit | — |
| 存储组织 | 256M x 16 | 256M x 16 |
| 电源电压 | 1.35 V | 1.35 V (1.28 V to 1.575 V) |
| Clock Frequency | 800 MHz | 933 MHz |
| Access Time | 20 ns | — |
| 接口 | Parallel | — |
| 封装 | 96-FBGA (8x14) | FBGA-96 |
| 安装类型 | Surface Mount | Surface Mount |
| 工作温度 | [DATA_NEEDED: operating temperature range] | 0°C to +95°C |
| 数据速率 | 1600 MT/s | 1866 Mbps/pin |
| CAS 延迟 | [DATA_NEEDED: CAS latency] | [DATA_NEEDED: CAS Latency] |
| RoHS 状态 | Compliant | — |
| Lead Free | Yes | — |
| 引脚数 | 96 | 96 |
| Density | — | 4 Gb |
| Operating Current | — | 14 mA |
| Standby Current | — | 2 mA, 3 mA |
| RoHS | — | Compliant |
| Burst Length | — | [DATA_NEEDED: Burst Length] |