MT41K256M16TW-107:P vs MT41K256M16 对比

详细并排对比 MT41K256M16TW-107:P 出自 Micron Technology 和 MT41K256M16 出自 Micron Technology。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Micron Technology
MT41K256M16TW-107:P MT41K256M16TW-107:P - 4Gb DDR3L SDRAM 933MHz | Micron

MT41K256M16TW-107:P - 4Gb DDR3L SDRAM 933MHz | Micron

MT41K256M16TW-107:P ✓ 量产中
Micron Technology
MT41K256M16 MT41K256M16 - 4Gb DDR3L SDRAM 1.35V x16 | Micron Technology

MT41K256M16 - 4Gb DDR3L SDRAM 1.35V x16 | Micron Technology

MT41K256M16 ✓ 量产中

规格对比

参数 MT41K256M16TW-107:P MT41K256M16
品牌 Micron Technology Micron Technology
分类 Memory ICs DRAM
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $16.00 $2.42
存储器类型 DDR3L SDRAM DDR3L SDRAM (1.35V)
存储容量 4Gbit (256M x 16) 4 Gbit
Clock Frequency 933 MHz —
数据速率 1866 MT/s —
电源电压 1.35V —
I/O Voltage 1.35V —
CAS 延迟 13 —
tRCD 20 ns —
tRP 20 ns —
Burst Length 8 —
封装 96-FBGA (8x14mm) 96-ball FBGA
工作温度 0°C to +95°C [DATA_NEEDED: operating temperature range for the full MPN suffix]
安装类型 Surface Mount Surface Mount
RoHS 状态 Compliant Compliant
Lead-Free Yes —
存储组织 — 256M x 16
Supply Voltage (VDD/VDDQ) — 1.35 V (1.5V-compatible mode supported)
Banks — 8
Speed Grade Options — -093 (2133 MT/s), -107 (1866 MT/s), -125 (1600 MT/s) [per family ordering options]
接口 — Parallel, source-synchronous DDR
On-Die Termination — Yes (ODT)
Refresh — 8K refresh cycles / 64 ms
CAS Latency Options — [DATA_NEEDED: CL options for the full MPN suffix]
Die Revision — Refer to DDR3 (1.5V) SDRAM Die Rev :E datasheet for 1.5V mode specs
ECCN — EAR99
Lead Free — Yes (per DigiKey product listing)

数据手册与资源

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