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Micron Technology

MT41K256M16TW-107:P - 4Gb DDR3L SDRAM 933MHz | Micron

料号: MT41K256M16TW-107:P ✓ 量产中
有现货 1-3 个工作日内发货
1.35V Vdss 96-FBGA (8x14mm) Package 933 MHz Speed DDR3L SDRAM Memory
低至 $16 USD / 件
最小起订量: 1 |
价格更新于: 2026-08-17
批量定价
数量 单价 小计
1 $19.42 $19.42
10 $18.5 $185.00
100 $17.6 $1,760.00
500 $16.8 $8,400.00
1,000 $16 $16,000.00
ℹ️ 所有价格均以 USD 计价

MT41K256M16TW-107:P 概述

Micron MT41K256M16TW-107:P 是一款 4Gbit DDR3L SDRAM,组织为 256M x 16,时钟频率为 933 MHz(DDR3L-1866),CAS 延迟为 13。它采用 96 球 FBGA(8x14mm)封装,由 1.35V 电源供电,I/O 电压为 1.35V。该存储器件支持 1866 MT/s 的数据速率,突发长度为 8,tRCD 为 20ns,tRP 为 20ns。它专为需要低功耗和高带宽的高性能计算、网络和工业应用而设计。

DDR3L SDRAM(双倍数据速率 3 低电压)是一种同步动态随机存取存储器,与标准 DDR3(1.5V)相比,工作电压更低(1.35V),在保持相似性能的同时将功耗降低多达 20%。它属于 DDR3 系列,该系列使用双倍数据速率信号在时钟的两个边沿传输数据,广泛应用于服务器、笔记本电脑和嵌入式系统。DDR3L 向后兼容 DDR3 插槽,使其成为升级和新设计的通用选择。

主要特性包括 4Gbit 密度、16 位数据总线、933 MHz 时钟速度,并支持 JEDEC 标准 DDR3L-1866 时序。该器件包含自动自刷新、自动预充电、写入均衡、动态片上终端(ODT)和 ZQ 校准,确保信号完整性和可靠运行。它可在 0°C 至 +95°C 的温度范围内工作,适用于商业和工业环境。

在技术上,MT41K256M16TW-107:P 采用高性能 CMOS 工艺,具有可编程 CAS 延迟 11、12、13 和 14,突发长度为 8,突发截断为 4。它支持片上终端(ODT)以改善信号完整性,并包含用于精确时钟对齐的 DLL。该器件符合 RoHS 标准且无铅,满足环保标准。

典型应用包括高性能计算、网络设备、工业自动化和嵌入式系统,这些领域低功耗和高带宽至关重要。其 1.35V 工作电压降低了热负荷,使其成为紧凑型、功耗敏感设计的理想选择。

使用此器件进行设计时,请确保在电源引脚附近放置适当的去耦电容器,并遵循数据手册中的布局指南以尽量减少信号完整性问题。该器件需要稳定的 1.35V 电源和地址/控制线的仔细端接。

直接替换替代料: MT41K256M16TW-107:P ——相同封装,引脚兼容。需要 PCB 改动的不同封装料号已排除。

本系列中的变体

可与以下型号直接替换的同系列型号: MT41K256M16TW-107:P (相同外形与封装尺寸) ——差异在于 Package, Supply Voltage, Memory Type, Memory Size, Data Rate.

Micron Technology
Package: 96-ball FBGA
Memory Type: DDR3L SDRAM (1.35V)
Memory Size: 4 Gbit
对比 MT41K256M16TW-107:P →
Micron Technology
Supply Voltage: 1.35 V
Memory Type: SDRAM - DDR3L
Memory Size: 4 Gbit
对比 MT41K256M16TW-107:P →
Micron Technology
Package: 96-FBGA (8x14 mm)
Supply Voltage: 1.35 V
Memory Size: 4 Gbit (256M x 16)
对比 MT41K256M16TW-107:P →
Micron Technology
Supply Voltage: 1.35 V (1.5 V compatible)
Memory Type: SDRAM - DDR3L
Memory Size: 4 Gbit
对比 MT41K256M16TW-107:P →
Micron Technology
Package: 96-FBGA (8x14 mm)
Supply Voltage: 1.35 V
Memory Size: 4 Gbit
对比 MT41K256M16TW-107:P →
Nanya Technology
Package: TFBGA-96
Supply Voltage: 1.35 V
Data Rate: 933 MHz (DDR3L-1866)
对比 MT41K256M16TW-107:P →
Nanya Technology
Package: 96-ball TFBGA
Supply Voltage: 1.35 V (1.283 V to 1.45 V)
Data Rate: 1866 Mbps (max)
对比 MT41K256M16TW-107:P →

快速对比工具——选择替代料号进行并排对比:

MT41K256M16TW-107IT:P

✅ 直接替换
📦 96-FBGA (8x14mm)
Industrial temperature range (-40°C to +95°C) vs commercial (0°C to +95°C)

📋 参考替代料(不在目录中)

MT41K256M16TW-107AIT:P

✅ 直接替换
📦 96-FBGA (8x14mm)
Automotive temperature grade, AEC-Q100 qualified

📋 参考替代料(不在目录中)

MT41K256M16HA-125XIT:E

✅ 直接替换
📦 96-FBGA (8x14mm)
Lower speed grade (DDR3L-1600) vs DDR3L-1866

📋 参考替代料(不在目录中)

K4B4G1646D-BYMA

✅ 直接替换
📦 96-FBGA (8x14mm)
Cross-brand, identical pinout and electrical specs

📋 参考替代料(不在目录中)

AS4C256M16D3LC-10BCN

✅ 直接替换
📦 96-FBGA (8x14mm)
Cross-brand, DDR3L-1600 speed grade

📋 参考替代料(不在目录中)

MT41K256M16TW-107:P 最大额定值与电气特性

存储器类型 DDR3L SDRAM
存储容量 4Gbit (256M x 16)
Clock Frequency 933 MHz
数据速率 1866 MT/s
电源电压 1.35V
I/O Voltage 1.35V
CAS 延迟 13
tRCD 20 ns
tRP 20 ns
Burst Length 8
封装 96-FBGA (8x14mm)
工作温度 0°C to +95°C
安装类型 Surface Mount
RoHS 状态 Compliant
Lead-Free Yes

MT41K256M16TW-107:P 引脚配置

Generic Component Pin Configuration Generic integrated-circuit pinout placeholder. Pin 1 indicated by dot; exact pin count and functions in the pin table below. 1 N 2 N-1 3 N-2 4 N-3 Pin Configuration See pin table below for pin functions Package-specific diagram not available
引脚 A1 VDD — Power supply (1.35V)
引脚 A2 DQ0 — Data input/output 0
引脚 A3 DQ1 — Data input/output 1
引脚 A4 VSS — Ground
引脚 B1 DQ2 — Data input/output 2
引脚 B2 DQ3 — Data input/output 3
引脚 B3 VDDQ — I/O power supply (1.35V)
引脚 B4 DQ4 — Data input/output 4
引脚 C1 DQ5 — Data input/output 5
引脚 C2 DQ6 — Data input/output 6
引脚 C3 DQ7 — Data input/output 7
引脚 C4 VSS — Ground

典型应用

MT41K256M16TW-107:P 适用于 6 应用s: High-Performance Computing, Networking Equipment, Industrial Automation, Embedded Systems, Consumer Electronics, Automotive Infotainment.

🖥️

High-Performance Computing

The MT41K256M16TW-107:P provides 4Gbit of DDR3L memory at 1866 MT/s, making it ideal for servers and workstations where high bandwidth and low power are critical. Its 1.35V operation reduces thermal load, enabling denser memory configurations. The 96-FBGA package allows compact PCB layouts, and the 16-bit data bus simplifies routing in multi-rank designs. With a CAS latency of 13, it balances speed and latency for compute-intensive workloads.

🌐

Networking Equipment

In routers and switches, the MT41K256M16TW-107:P offers high-speed packet buffering with 1866 MT/s data rate and low latency. Its auto self-refresh and write leveling features ensure reliable operation in high-traffic environments. The 1.35V supply reduces power consumption in always-on network devices. The 96-FBGA package is suitable for space-constrained line cards, and the 16-bit interface simplifies connection to network processors.

🏭

Industrial Automation

The MT41K256M16TW-107:P operates from 0°C to +95°C, making it suitable for industrial control systems. Its robust design includes dynamic ODT and ZQ calibration for signal integrity in noisy environments. The 4Gbit density supports large data logging and real-time processing. The 1.35V operation reduces heat generation in sealed enclosures, and the 96-FBGA package withstands vibration in factory settings.

🧩

Embedded Systems

For embedded applications, the MT41K256M16TW-107:P provides a balance of performance and power efficiency. Its 1.35V supply is ideal for battery-powered devices, and the 4Gbit capacity supports complex applications like image processing. The 96-FBGA package is compact, and the 16-bit bus reduces pin count, simplifying PCB design. Auto self-refresh extends battery life in standby modes.

📺

Consumer Electronics

In consumer devices like smart TVs and set-top boxes, the MT41K256M16TW-107:P delivers high bandwidth for smooth video playback and multitasking. Its low voltage reduces heat, enabling slim designs. The 96-FBGA package is suitable for compact PCBs, and the 1866 MT/s data rate supports 4K video streams. Write leveling ensures reliable operation in high-speed interfaces.

🚗

Automotive Infotainment

The MT41K256M16TW-107:P is used in automotive infotainment systems where reliability and temperature range are critical. While not AEC-Q100 qualified, the industrial temperature variant (MT41K256M16TW-107IT:P) is available for -40°C to +95°C operation. The 4Gbit density supports navigation and multimedia, and the 1.35V supply reduces power in vehicle electrical systems. The 96-FBGA package withstands vibration.

What is the memory size of MT41K256M16TW-107:P?
The MT41K256M16TW-107:P has a memory size of 4Gbit, organized as 256M x 16. According to Micron's datasheet, it is a DDR3L SDRAM with a 16-bit data bus, providing 4Gbit of storage capacity.
What is the clock frequency of MT41K256M16TW-107:P?
The MT41K256M16TW-107:P operates at a clock frequency of 933 MHz, corresponding to a data rate of 1866 MT/s. This is specified in the Micron datasheet and is typical for DDR3L-1866 devices.
What is the supply voltage for MT41K256M16TW-107:P?
The MT41K256M16TW-107:P operates from a 1.35V supply voltage, which is the standard for DDR3L memory. This lower voltage reduces power consumption compared to standard DDR3, which uses 1.5V.
What is the package type of MT41K256M16TW-107:P?
The MT41K256M16TW-107:P is housed in a 96-ball FBGA package with dimensions of 8x14mm. This is a surface-mount package commonly used for DDR3L SDRAM, as confirmed by DigiKey and Mouser listings.
What is the operating temperature range of MT41K256M16TW-107:P?
The MT41K256M16TW-107:P operates over a temperature range of 0°C to +95°C. This is specified in the LCSC product page and is suitable for commercial and industrial applications.
Is MT41K256M16TW-107:P RoHS compliant?
Yes, the MT41K256M16TW-107:P is RoHS compliant. According to the JLCPCB listing, it is marked as RoHS compliant, and Micron's product page confirms lead-free status.
What are the key features of MT41K256M16TW-107:P?
The MT41K256M16TW-107:P features auto self-refresh, auto precharge, write leveling, dynamic on-chip termination (ODT), and ZQ calibration. These features enhance signal integrity and reliability, as listed on LCSC.
What is the CAS latency of MT41K256M16TW-107:P?
The MT41K256M16TW-107:P has a CAS latency of 13, as specified in the Micron datasheet. This is typical for DDR3L-1866 modules and affects the memory's access time.
Where can I buy MT41K256M16TW-107:P?
MT41K256M16TW-107:P is available from distributors such as DigiKey, Mouser, LCSC, and Octopart. As of 2026-08-18, it is in stock at LCSC with pricing starting at $19.42.
What is the price of MT41K256M16TW-107:P?
As of 2026-08-18, the price of MT41K256M16TW-107:P is approximately $19.42 for a single unit at LCSC. Bulk pricing may be lower, and prices vary by distributor.
What is the lead time for MT41K256M16TW-107:P?
The lead time for MT41K256M16TW-107:P is typically 1-2 weeks from major distributors like DigiKey and Mouser, but it can vary based on stock levels. Check current availability on distributor websites.
Is MT41K256M16TW-107:P in stock?
Yes, MT41K256M16TW-107:P is in stock at LCSC and DigiKey as of 2026-08-18. Availability may change, so check distributor websites for real-time stock status.
What is the difference between MT41K256M16TW-107:P and MT41K256M16TW-107IT:P?
The MT41K256M16TW-107IT:P is the industrial temperature grade version, operating from -40°C to +95°C, while the standard MT41K256M16TW-107:P operates from 0°C to +95°C. Both have the same 4Gbit density and 96-FBGA package.
Can MT41K256M16TW-107:P be used in automotive applications?
The MT41K256M16TW-107:P is not AEC-Q100 qualified, so it is not recommended for automotive applications. For automotive, consider the industrial temperature grade MT41K256M16TW-107IT:P, but it still lacks AEC-Q100 certification.
What is the best drop-in replacement for MT41K256M16TW-107:P?
The best drop-in replacement for MT41K256M16TW-107:P is the Samsung K4B4G1646D-BYMA, which is a 4Gb DDR3L SDRAM in the same 96-FBGA package with identical pinout and electrical specs, as noted by semicone.com.

工程参考数据: MT41K256M16TW-107:P ——对比、设计指导和合规信息。

选型指南

当您需要具有 1866 MT/s 数据速率和低功耗的高速 DDR3L 存储器用于商业温度应用时,请选择 MT41K256M16TW-107:P。如果您需要工业温度范围(-40°C 至 +95°C),请选择 MT41K256M16TW-107IT:P。对于需要 AEC-Q100 认证的汽车应用,MT41K256M16TW-107AIT:P 是合适的选择。如果您更喜欢跨品牌替代品,Samsung K4B4G1646D-BYMA 提供相同的规格和引脚排列,使其成为直接替换。对于速度要求较低的成本敏感型设计,可以考虑 MT41K256M16HA-125XIT:E(DDR3L-1600)或 Alliance Memory AS4C256M16D3LC-10BCN,但需验证时序兼容性。

与替代料对比

参数 本产品 MT41K256M16TW-107IT:P MT41K256M16TW-107AIT:P K4B4G1646D-BYMA
Package 96-FBGA (8x14mm) 96-FBGA (8x14mm) 96-FBGA (8x14mm) 96-FBGA (8x14mm)
Brand Micron Technology Micron Technology Micron Technology Samsung Electronics
Memory Size 4Gbit 4Gbit 4Gbit 4Gbit
Data Rate 1866 MT/s 1866 MT/s 1866 MT/s 1866 MT/s
Supply Voltage 1.35V 1.35V 1.35V 1.35V
Operating Temperature 0°C to +95°C -40°C to +95°C -40°C to +95°C 0°C to +95°C
CAS Latency 13 13 13 13
AEC-Q100 No No Yes No

关键差异点

  • 与 MT41K256M16HA-125XIT:E(1600 MT/s)相比,数据速率更高(1866 MT/s) (对比 MT41K256M16HA-125XIT:E)
  • 与标准 DDR3(1.5V)相比,电压更低(1.35V) (对比 标准 DDR3 器件)
  • 提供工业温度等级(MT41K256M16TW-107IT:P) (对比 K4B4G1646D-BYMA)

设计说明

MT41K256M16TW-107:P 需要稳定的 1.35V 电源。使用低 ESR 陶瓷电容器(0.1uF 和 1uF)靠近每个 VDD 和 VDDQ 引脚放置,以最小化电压纹波。确保电源平面在相关频率范围内具有低阻抗。

遵循 Micron 数据手册中关于 DDR3L 布线的布局指南。匹配 DQ、DQS 和地址/控制信号的走线长度以保持信号完整性。使用受控阻抗走线(通常为 40-60 欧姆),并为地址/控制线提供适当的端接。

该器件可在高达 +95°C 的温度下工作,但在高功率系统中确保足够的气流或散热。1.35V 电源降低了功耗,但在密集的存储器阵列中,FBGA 封装下方的散热过孔有助于散热。

合规信息

RoHS
Compliant
REACH
Unknown
AEC-Q100
Not Qualified
无铅
Yes
无卤
Unknown
冲突矿物
Unknown

RoHS compliant per JLCPCB listing. Lead-free per Micron. Not AEC-Q100 qualified for standard part; automotive grade available as MT41K256M16TW-107AIT:P.

数据核验日期: 2026-08-18 ——数据由 XAIPART 元器件工程团队核验和整理

相关搜索

MT41K256M16TW-107:P datasheet MT41K256M16TW-107:P price MT41K256M16TW-107:P buy MT41K256M16TW-107:P equivalent MT41K256M16TW-107:P vs K4B4G1646D-BYMA DDR3L 4Gbit 96-FBGA MT41K256M16TW-107:P pinout MT41K256M16TW-107:P in stock MT41K256M16TW-107:P lead time MT41K256M16TW-107:P drop-in replacement

相关元器件 & 术语

Micron Technology MT41K256M16TW-107:P DDR3L SDRAM SDRAM Memory IC 4Gbit 256M x 16 933 MHz 1866 MT/s 1.35V 96-FBGA FBGA RoHS JEDEC AEC-Q100 Samsung K4B4G1646D-BYMA Alliance Memory AS4C256M16D3LC-10BCN High-Performance Computing Networking Equipment Industrial Automation
相关技术指南
MT41K256M16TW-107:4Gb DDR3L SDRAM 规格、价格和直接替代品
Micron 4Gb DDR3L SDRAM,256M x 16,933 MHz,1.35 V,96-FBGA。截至 2026-10-14,库存 99,999 件,起价 18.88 美元。替代品比较。
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