MT53E1G32D2FW-046 vs MT53E512M32D2FW-046 AAT:D 对比
详细并排对比 MT53E1G32D2FW-046 出自 Micron Technology 和 MT53E512M32D2FW-046 AAT:D 出自 Micron Technology。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
Micron Technology
MT53E1G32D2FW-046 - 32Gbit LPDDR4X SDRAM 200-TFBGA | Micron
MT53E1G32D2FW-046 ✓ 量产中Micron Technology
MT53E512M32D2FW-046 - 16Gb LPDDR4 SDRAM 2133MHz | Micron
MT53E512M32D2FW-046 AAT:D ✓ 量产中规格对比
| 参数 | MT53E1G32D2FW-046 | MT53E512M32D2FW-046 AAT:D |
|---|---|---|
| 品牌 | Micron Technology | Micron Technology |
| 分类 | Memory ICs | Memory ICs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $295.93 | $13.75 |
| 存储器类型 | Mobile LPDDR4X SDRAM | SDRAM - Mobile LPDDR4/LPDDR4X |
| 存储容量 | 32 Gbit (4 GB) | 16 Gbit |
| 存储组织 | 1G x 32 (dual-die, 2 x 16-bit channels) | 512M x 32 |
| 接口 | Parallel | Parallel |
| Clock Frequency | 2133 MHz (2.133 GHz) | 2133 MHz (2.133 GHz) |
| 数据速率 | 4266 Mb/s per pin | — |
| Access Time | 3.5 ns | — |
| Write Cycle Time | 18 ns | — |
| VDDQ I/O Voltage | 0.6 V | — |
| 封装 | 200-TFBGA (10 x 14.5 mm) | 200-TFBGA (10 mm x 14.5 mm) |
| Ball Diameter | 0.40 mm (SMD balls) | — |
| 安装类型 | Surface Mount | Surface Mount |
| Operating Temperature (AUT variant) | -40C to +125C | — |
| Die Revisions | :A (FBGA D9ZQX) and :B (FBGA D8CJB) | — |
| 特性 | Auto self-refresh, built-in temperature sensor, auto precharge, write leveling, ZQ calibration | — |
| RoHS 状态 | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS status] |
| MSL Rating | [DATA_NEEDED: moisture sensitivity level] | — |
| Cycle Time | — | 3.5 ns |
| Supply Voltage VDD | — | 1.1 V |
| Supply Voltage VDDQ (LPDDR4) | — | 1.1 V |
| Supply Voltage VDDQ (LPDDR4X) | — | 0.6 V |
| Core Voltage VDD2 | — | 1.8 V |
| 工作温度 | — | -40C to +105C (AAT:D grade) |
| Automotive Qualification | — | AEC-Q100 (AUT:D variant verified; AAT:D automotive grade per Micron catalog) |
| Memory Configuration Speed Grade | — | -046 (2133) |
| MSL 等级 | — | [DATA_NEEDED: moisture sensitivity level] |