MT53E1G32D2FW-046 vs MT53E512M32D2FW-046 AAT:D Vergleich
Detaillierter Direktvergleich von MT53E1G32D2FW-046 von Micron Technology und MT53E512M32D2FW-046 AAT:D von Micron Technology. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Micron Technology
MT53E1G32D2FW-046 - 32Gbit LPDDR4X SDRAM 200-TFBGA | Micron
MT53E1G32D2FW-046 ✓ AktivMicron Technology
MT53E512M32D2FW-046 - 16Gb LPDDR4 SDRAM 2133MHz | Micron
MT53E512M32D2FW-046 AAT:D ✓ AktivSpezifikationsvergleich
| Parameter | MT53E1G32D2FW-046 | MT53E512M32D2FW-046 AAT:D |
|---|---|---|
| Marke | Micron Technology | Micron Technology |
| Kategorie | Memory ICs | Memory ICs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $295,93 | $13,75 |
| Speichertyp | Mobile LPDDR4X SDRAM | SDRAM - Mobile LPDDR4/LPDDR4X |
| Speichergröße | 32 Gbit (4 GB) | 16 Gbit |
| Speicherorganisation | 1G x 32 (dual-die, 2 x 16-bit channels) | 512M x 32 |
| Schnittstelle | Parallel | Parallel |
| Clock Frequency | 2133 MHz (2.133 GHz) | 2133 MHz (2.133 GHz) |
| Datenrate | 4266 Mb/s per pin | — |
| Access Time | 3.5 ns | — |
| Write Cycle Time | 18 ns | — |
| VDDQ I/O Voltage | 0.6 V | — |
| Gehäuse | 200-TFBGA (10 x 14.5 mm) | 200-TFBGA (10 mm x 14.5 mm) |
| Ball Diameter | 0.40 mm (SMD balls) | — |
| Montageart | Surface Mount | Surface Mount |
| Operating Temperature (AUT variant) | -40C to +125C | — |
| Die Revisions | :A (FBGA D9ZQX) and :B (FBGA D8CJB) | — |
| Eigenschaften | Auto self-refresh, built-in temperature sensor, auto precharge, write leveling, ZQ calibration | — |
| RoHS-Status | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS status] |
| MSL Rating | [DATA_NEEDED: moisture sensitivity level] | — |
| Cycle Time | — | 3.5 ns |
| Supply Voltage VDD | — | 1.1 V |
| Supply Voltage VDDQ (LPDDR4) | — | 1.1 V |
| Supply Voltage VDDQ (LPDDR4X) | — | 0.6 V |
| Core Voltage VDD2 | — | 1.8 V |
| Betriebstemperatur | — | -40C to +105C (AAT:D grade) |
| Automotive Qualification | — | AEC-Q100 (AUT:D variant verified; AAT:D automotive grade per Micron catalog) |
| Memory Configuration Speed Grade | — | -046 (2133) |
| MSL-Level | — | [DATA_NEEDED: moisture sensitivity level] |